Datasheet > ME70N03

ME70N03

更新时间： 2024-11-08 03:49:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
3页	184K
描述
30V N-Channel Enhancement Mode MOSFET

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ME70N03 数据手册

ME70N03

30V N-Channel Enhancement Mode MOSFET

Pb Free Product

VDS=30V

RDS(ON),Vgs@10V,Ids@45A=6mÙ

RDS(ON),Vgs@4.5V,Ids@30A=10mÙ

FEATURES

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Specially Designed for DC/DC Converters and Motor Drivers

Fully Characterized Avalanche Voltage and Current

TO-252(D-PAK)

Top View

INTERNAL SCHEMATIC DIAGRAM

Drain

Gate

Source

Absolute Maximum Ratings (TA=25

Unless Otherwise Noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Symbol

Limit

Unit

VDS

VGS

350

IDM

Pulsed Drain Current

TA=25

TA=100

Operating Junction Temperature

Storage Temperature Range

Maximum Power Dissipation

-55 to 150

Tstg

Avalanche Energy with Single Pulse

ID = 50A,VDD= 25V, L= 0.5mH

300

1.8

EAS

Junction-to-Case Thermal Resistance

Junction-to-Ambient Thermal Resistance

(PCB mounted)

Note:1.Maximum DC current limitedby the package

2.1-in 2oz CuPCB board

Jul,2005-Ver1.0

12 3

中文翻译

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