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MDF13N50TH PDF预览

MDF13N50TH

更新时间: 2024-11-19 01:16:39
品牌 Logo 应用领域
美格纳 - MGCHIP /
页数 文件大小 规格书
6页 837K
描述
N-Channel MOSFET 500V, 13.0 A, 0.5(ohm)

MDF13N50TH 数据手册

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Nov2009.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
                                                                                                                              
MDF13N50ꢀꢀ  
NꢁChannelꢀMOSFETꢀ500V,ꢀ13.0ꢀA,ꢀ0.5ꢀ  
GeneralꢀDescriptionꢀ  
Featuresꢀ  
Theꢀ MDF13N50ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ  
Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁstateꢀ resistance,ꢀ highꢀ  
ꢀ  
ꢀ  
ꢀ  
ꢀ  
VDSꢀ=ꢀ500Vꢀ  
VDSꢀ=ꢀ550Vꢀ@ꢀTjmax  
switchingꢀperformanceꢀandꢀexcellentꢀquality.ꢀ  
IDꢀ=ꢀ13.0Aꢀ  
RDS(ON)ꢀ≤ꢀ0.5ꢂꢀ  
@ꢀVGSꢀ=ꢀ10Vꢀ  
@ꢀVGSꢀ=ꢀ10Vꢀ  
MDF13N50ꢀ isꢀ suitableꢀ deviceꢀ forꢀ SMPS,ꢀ highꢀ Speedꢀ  
Applicationsꢀ  
switchingꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ  
ꢀ  
ꢀ  
ꢀ  
PowerꢀSupplyꢀ  
HIDꢀ  
Lightingꢀ  
ꢀ ꢀ ꢀ ꢀ  
Gꢀ  
Dꢀ  
Sꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ  
Characteristicsꢀ  
Symbolꢀ  
VDSS  
VDSSꢀ@ꢀTjmax  
VGSS  
Ratingꢀ  
500ꢀ  
550ꢀ  
±30ꢀ  
13ꢀ  
Unitꢀ  
Vꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ  
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ@ꢀTjmax  
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ  
Vꢀ  
Vꢀ  
ꢀ TC=25oCꢀ  
Aꢀ  
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ()ꢀ  
IDꢀ  
IDM  
PDꢀ  
ꢀ TC=100oCꢀ  
Aꢀ  
8.2ꢀ  
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)  
ꢀ ꢀ PowerꢀDissipationꢀ  
52ꢀ  
Aꢀ  
ꢀ TC=25oCꢀ  
41ꢀ  
Wꢀ  
W/ oCꢀ  
Derateꢀaboveꢀ25 oCꢀ  
0.33ꢀ  
4.5ꢀ  
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)  
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)  
Dv/dtꢀ  
EAS  
TJ,ꢀTstg  
V/nsꢀ  
mJꢀ  
oC  
580ꢀ  
ꢁ55~150ꢀ  
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ  
ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ  
ThermalꢀCharacteristicsꢀ  
Characteristicsꢀ  
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)  
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)  
Symbolꢀ  
RθJA  
RθJC  
Ratingꢀ  
62.5ꢀ  
Unitꢀ  
oC/Wꢀ  
3.05ꢀ  
ꢀ ꢀ ꢀ ꢀ  
1ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.  

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