生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G14 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.76 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 10 V |
配置: | 2 BANKS, COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PDSO-G14 | 元件数量: | 6 |
端子数量: | 14 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN AND PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 150 MHz |
VCEsat-Max: | 0.25 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MDC01TL | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon | |
MDC01TR | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon | |
MDC02TL | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 3-Element, PNP, Silicon | |
MDC02TR | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 3-Element, PNP, Silicon | |
MDC03T1 | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon | |
MDC03T2 | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon | |
MDC03TL | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon | |
MDC03TR | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 10V V(BR)CEO, 6-Element, NPN and PNP, Silicon | |
MDC04TL | ROHM |
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Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 3-Element, PNP, Silicon | |
MDC04TR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 20V V(BR)CEO, 3-Element, PNP, Silicon |