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MCRF450I/WB PDF预览

MCRF450I/WB

更新时间: 2024-11-16 20:51:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 电信电信集成电路
页数 文件大小 规格书
40页 315K
描述
SPECIALTY TELECOM CIRCUIT, UUC6, 0.011 INCH, WAFER-6

MCRF450I/WB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:WAFER
包装说明:DIE,针数:6
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.6JESD-30 代码:R-XUUC-N6
JESD-609代码:e3功能数量:1
端子数量:6最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装代码:DIE封装形状:RECTANGULAR
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified表面贴装:YES
技术:CMOS电信集成电路类型:TELECOM CIRCUIT
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MCRF450I/WB 数据手册

 浏览型号MCRF450I/WB的Datasheet PDF文件第2页浏览型号MCRF450I/WB的Datasheet PDF文件第3页浏览型号MCRF450I/WB的Datasheet PDF文件第4页浏览型号MCRF450I/WB的Datasheet PDF文件第5页浏览型号MCRF450I/WB的Datasheet PDF文件第6页浏览型号MCRF450I/WB的Datasheet PDF文件第7页 
MCRF450  
FEATURES  
13.56 MHz Read/Write Passive RFID Device  
PACKAGE TYPES  
• Carrier Frequency: 13.56 MHz  
PDIP/SOIC  
• Data rate for reading: 70 kHz  
ANT_A  
VDD  
• Contactless read and write  
1
8
• 1024 bits (32 blocks) of total memory  
• 864 bits of user programmable memory  
• User controlled write protection of each block  
• Manchester coding protocol with CRC for reading  
NC  
ANT_B  
CLK  
FCLK  
NC  
2
3
4
7
6
5
VSS  
• RF field gaps and 1-of-16 PPM with CRC  
for writing  
• Built-in anticollision algorithm for reading and writ-  
ing multiple tags in the same RF field  
DESCRIPTION  
The MCRF450 is a contactless read/write passive  
RFID device that is optimized for 13.56 MHz RF carrier  
signal. The device needs an external LC resonant cir-  
cuit to communicate with interrogator wirelessly. The  
device is powered remotely by rectifying an RF signal  
that is transmitted from the interrogator, and transmits  
or updates its contents of memory based on com-  
mands from the interrogator.  
• Three pads for external antenna circuit  
• Factory programmed unique 32-bit tag ID  
• Interrogator talks first (ITF) or tag talks first (TTF)  
operation  
• Fast and normal modes for data transmission  
• Anti-tearing feature  
• Full 32-bit EAS support  
• Very low power CMOS design  
The device is engineered to be used effectively for item  
level tagging applications such as retail and inventory  
management, where a large volume of tags are read  
and written in the same interrogator field.  
• Die, wafer, COB module, PDIP, or SOIC package  
options  
The device contains 32 blocks of EEPROM memory.  
Each block consists of 32 bits. The first three blocks (B0  
- B2: 96 bits) are allocated for device operation, the  
next 27 blocks (B3 - B29: 864 bits) are for user data,  
and the remaining 2 blocks (B30 - B31: 64 bits) are  
reserved for future use. The 864 (B3 - B29) user bits  
are contactlessly read or written block-wise by interro-  
gator commands. All blocks except bits 30 and 31 in  
block 0 are write protectable.  
The device has two operational modes depending on  
the conditions of talk first (TF) and fast read (FR) bits.  
These modes are: “tag talks first” (TTF) and “interroga-  
tor talks first” (ITF) modes. The device operates in TTF  
mode if both TF and FR bits are set. In this mode, the  
device transmits its fast read response data (96 bits in  
default) as soon as it is energized, and waits for the  
next commands. The device operates in the “interroga-  
tor talks first” mode, if the TF bit is cleared. In this  
mode, the device requires an interrogator command  
before it sends any data.  
2000 Microchip Technology Inc.  
Preliminary  
DS40232A-page 1  

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