Datasheet > MCRN100-6

MCRN100-6

更新时间： 2023-12-06 20:11:14

品牌	Logo	应用领域
鲁光 - LGE		可控硅
页数	文件大小	规格书
3页	879K
描述
单向可控硅

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中文翻译

获取价格

数据手册

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MCRN100-6 数据手册

MCRN100- 6,- 8

SOT-89-3L

SOT-89-3L Plastic-Encapsulate Thyristors

FEATURES

1.GATE

Current-I_GT: 200 µA

2.ANODE

3.KATHODE

_TRMS: 0.8 A

RRM/ V_DRM: MCRN100-6: 400 V

MCRN100-8: 600 V

Operating and storage junction temperature range

T_J，T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（Ta=25℃ unless otherwise specified）

Parameter

On state voltage

Symbol

Test conditions

I_TM=1A

V_AK=7V

Min

Max

1.7

Unit

V_TM

Gate trigger voltage

V_GT

0.8

Peak Repetitive forward and reverse

blocking voltage

V_DRM

_DRM= 10 µA

AND

MCRN100-6

MCRN100-8

Peak forward or reverse blocking

400

600

V_RRM

I_DRM

I_RRM

V_AK= Rated

µA

Current

DRM

or V_RRM

Holding current

I_H

I_HL= 20mA ,V^AK= 7V

µA

Gate trigger current

I_GT

V_AK=7V

200

µA

* Forward current applied for 1 ms maximum duration，duty cycle≤1%。

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170301-P1

12 3

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