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MCR69-3

更新时间： 2024-11-09 20:34:15
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页数 文件大小 规格书
5页 1240K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 100; Max TMS Bridge Input Voltage: 16; Max DC Reverse Voltage: 2; Capacitance: 50; Package: TO-220AB

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MCR69-3 技术参数

生命周期：ActiveReach Compliance Code：unknown
风险等级：5.69Is Samacsys：N
Base Number Matches：1

MCR69-3 数据手册

 浏览型号MCR69-3的Datasheet PDF文件第2页浏览型号MCR69-3的Datasheet PDF文件第3页浏览型号MCR69-3的Datasheet PDF文件第4页浏览型号MCR69-3的Datasheet PDF文件第5页 
MCR69 SERIES  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak repetitive off-state voltage(1)  
(TJ = -40 to +125°C, gate open)  
MCR69-1  
VDRM  
VRRM  
25  
50  
V
MCR69-2  
MCR69-3  
100  
Peak discharge current(2)  
ITM  
750  
25  
A
A
A
On-state RMS current (180° conduction angles, TC = 85°C)  
Average on-state current (180° conduction angles, TC = 85°C)  
IT(RMS)  
IT(AV)  
16  
Peak non-repetitive surge current  
ITSM  
A
(half-cycle, sine wave, 60Hz, TJ = 125°C)  
300  
375  
Circuit fusing consideration (t = 8.3ms)  
I2t  
IGM  
PGM  
PG(AV)  
TJ  
A2s  
A
≤ 1.0µs, T  
Forward peak gate current (pulse width  
Forward peak gate power (pulse width  
C = 85°C)  
2.0  
≤ 1.0µs, T  
C = 85°C)  
20  
W
Forward average gate power (t = 8.3ms, TC = 85°C)  
Operating junction temperature range  
Storage temperature range  
0.5  
W
-40 to +125  
-40 to +150  
8.0  
°C  
Tstg  
-
°C  
Mounting torque  
In. lb.  
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative  
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
Note 2: Ratings apply for tw = 1ms.  
Note 3: Test conditions: IG = 150mA, VD = rated VDRM, ITM = rated value, TJ = 125°C.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
RӨJC  
Maximum  
Unit  
°C/W  
°C/W  
Thermal resistance, junction to case  
Thermal resistance, junction to ambient  
1.5  
60  
RӨJA  
Lead solder temperature  
TL  
°C  
(lead length 1/8” from case, 10s max)  
260  
Rev. 20130115  
12345

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与MCR69-3相关器件

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MCR69-3-16 MOTOROLA

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 		Silicon Controlled Rectifier, 25A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220, 2
MCR69-3-AD MOTOROLA

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 		25A, 100V, SCR, TO-220AB
MCR69-3-AF MOTOROLA

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 		25A, 100V, SCR, TO-220AB
MCR69-3-AJ MOTOROLA

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 		25A, 100V, SCR, TO-220AB
MCR69-3-AK MOTOROLA

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 		Silicon Controlled Rectifier, 25A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB
MCR69-3-AN MOTOROLA

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 		25A, 100V, SCR, TO-220AB
MCR69-3-AU MOTOROLA

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 		25A, 100V, SCR, TO-220AB
MCR69-3-BA MOTOROLA

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 		25A, 100V, SCR, TO-220AB
MCR69-3-BC MOTOROLA

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 		Silicon Controlled Rectifier, 25A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB
MCR69-3-BD MOTOROLA

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 		Silicon Controlled Rectifier, 25A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-220AB

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