Datasheet > MCR3935-7

MCR3935-7

更新时间： 2024-11-08 01:23:31

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
3页	153K
描述
SILICON CONTROLLED RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCR3935-7 数据手册

D I G I T R O N S E M I C O N D U C T O R S

MCR3935 SERIES

SILICON CONTROLLED RECTIFIER

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage⁽¹⁾

MCR3935-1

MCR3935-2

MCR3935-3

MCR3935-4

MCR3935-5

MCR3935-6

MCR3935-7

MCR3935-8

MCR3935-9

MCR3935-10

100

200

300

400

500

600

700

800

V_RRM, V_DRM

Volts

Peak non-repetitive reverse blocking voltage (t ≤ 5ms)

MCR3935-1

MCR3935-2

MCR3935-3

MCR3935-4

MCR3935-5

MCR3935-6

MCR3935-7

MCR3935-8

MCR3935-9

MCR3935-10

100

200

300

400

500

600

700

800

V_RSM

Volts

Forward on-state current RMS (all conduction angles)

I_T(RMS)

I_TSM

Amps

Peak surge current

(one cycle, 60Hz, T_J= -40 to +125°C)

Circuit fusing considerations

I²t

A²s

(T_J= -40 to +100°C, t ≤ 8.3ms)

510

Peak gate power

P_GM

P_G(AV)

I_GM

Watts

Amps

Volts

°C

Average gate power

0.5

Peak forward gate current

Peak gate voltage, forward or reverse

Operating junction temperature range

Storage temperature range

Mounting torque

V_GM

T_J

-40 to +125

-40 to +150

T_stg

°C

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied

concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

R_ӨJC

1.2

°C/W

ELECTRICAL CHARACTERISTICS (T_C= 25°C)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM, gate open)

T_J= 25°C

_DRM,I_RRM

µA

T_J= 100°C

Forward “on” voltage

V_TM

Volts

(I_TM= 35A peak)

1.2

1.5

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130118

12 3

中文翻译

下载PDF

与MCR3935-7相关器件

型号	品牌	获取价格	描述	数据表
MCR3935-8	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTOR
MCR3935-8	FREESCALE	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTOR
MCR3935-8	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Inp
MCR3935-8	NJSEMI	获取价格	Silicon Controlled Rectifier Reverse Blocking Triode Thyristor
MCR3935-8A	MOTOROLA	获取价格	35A, 600V, SCR
MCR3935-9	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 700; Max TMS Bridge Inp
MCR393B-10	NJSEMI	获取价格	Silicon Controlled Rectifier Reverse Blocking Triode Thyristor
MCR393B-2	NJSEMI	获取价格	Silicon Controlled Rectifier Reverse Blocking Triode Thyristor
MCR393B-3	NJSEMI	获取价格	Silicon Controlled Rectifier Reverse Blocking Triode Thyristor
MCR393B-4	NJSEMI	获取价格	Silicon Controlled Rectifier Reverse Blocking Triode Thyristor

与MCR3935-7相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

16
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

13
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

37
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

34

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR3935-7

MCR3935-7 数据手册

与MCR3935-7相关器件

与MCR3935-7相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR3935-7

MCR3935-7 数据手册

与MCR3935-7相关器件

与MCR3935-7相关文章

您还可以找

您在本页遇到什么问题？