Datasheet > MCR3918-3

MCR3918-3

更新时间： 2024-11-08 01:04:07

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
6页	272K
描述
SILICON CONTROLLED RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCR3918-3 数据手册

D I G I T R O N S E M I C O N D U C T O R S

MCR3818 SERIES, MCR3918 SERIES

SILICON CONTROLLED RECTIFIER

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage⁽¹⁾

MCR3818, MCR3918-2

MCR3818, MCR3918-3

100

200

400

600

800

MCR3818, MCR3918-4

_RRM, V_DRM

Volts

MCR3818, MCR3918-6

MCR3818, MCR3918-8

MCR3818, MCR3918-10

Peak non-repetitive reverse blocking voltage

MCR3818, MCR3918-2

MCR3818, MCR3918-3

150

300

500

700

900

MCR3818, MCR3918-4

V_RSM

Volts

MCR3818, MCR3918-6

MCR3818, MCR3918-8

MCR3818, MCR3918-10

Forward on-state current RMS (all conduction angles)

Average on-state current (T_C= 67°C)

I_T(RMS)

I_T(AV)

Amps

Circuit fusing considerations

I²t

A²s

(T_J= -40 to +100°C, t ≤ 8.3ms)

235

Peak non-repetitive surge current

I_TSM

Amps

(1/2 cycle, 60Hz, T_J= -40 to +100°C)

240

Peak gate power (maximum pulse width = 10µs)

Average gate power

P_GM

P_G(AV)

I_GM

Watts

Amps

Volts

°C

0.5

Peak forward gate current (maximum pulse width = 10µs)

Peak gate voltage

V_GM

T_J

Operating junction temperature range

Storage temperature range

-40 to +125

-40 to +150

T_stg

°C

Mounting torque

In. lb.

Note 1: V_DRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent

with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typical

Maximum

Unit

Thermal resistance, junction to case

R_ӨJC

°C/W

DIGI PF2

TO-48

1.5

1.6

1.1

ELECTRICAL CHARACTERISTICS (T_C= 25°C)

Characteristic

Symbol

Min.

Max.

Unit

Peak forward or reverse blocking current

(Rated V_DRMor V_RRM, gate open)

T_J= 25°C

I_DRM,I_RRM

µA

T_J= 100°C

Gate trigger current (continuous dc)

(V_D= 7Vdc, R_L= 100Ω)

I_GT

(V_D= 7Vdc, R_L= 100Ω, TC = -40°C)

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130118

12 3 4 5 6

中文翻译

下载PDF

与MCR3918-3相关器件

型号	品牌	获取价格	描述	数据表
MCR3918-4	DIGITRON	获取价格	SILICON CONTROLLED RECTIFIER
MCR3918-6	DIGITRON	获取价格	SILICON CONTROLLED RECTIFIER
MCR3918-8	DIGITRON	获取价格	SILICON CONTROLLED RECTIFIER
MCR3935	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTOR
MCR3935	FREESCALE	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTOR
MCR3935	NJSEMI	获取价格	Silicon Controlled Rectifier Reverse Blocking Triode Thyristor
MCR3935	DIGITRON	获取价格	SILICON CONTROLLED RECTIFIER
MCR3935-1	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 25; Max TMS Bridge Inpu
MCR3935-10	FREESCALE	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTOR
MCR3935-10	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTOR

与MCR3918-3相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

16
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

13
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

37
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

34

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR3918-3

MCR3918-3 数据手册

与MCR3918-3相关器件

与MCR3918-3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR3918-3

MCR3918-3 数据手册

与MCR3918-3相关器件

与MCR3918-3相关文章

您还可以找

您在本页遇到什么问题？