Datasheet > MCR3835-9

MCR3835-9

更新时间： 2024-11-25 19:31:15

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
3页	493K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 700; Max TMS Bridge Input Voltage: 22; Max DC Reverse Voltage: 5; Capacitance: 50; Package: DIGI-PF2

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技术参数
数据手册

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MCR3835-9 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.81
Base Number Matches：	1

MCR3835-9 数据手册

MCR3835 SERIES

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS.

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage⁽¹⁾

MCR3835-1

MCR3835-2

MCR3835-3

MCR3835-4

MCR3835-5

MCR3835-6

MCR3835-7

MCR3835-8

MCR3835-9

MCR3835-10

100

200

300

400

500

600

700

800

V_RRM, V_DRM

Volts

Peak non-repetitive blocking voltage⁽¹⁾

MCR3835-1

MCR3835-2

MCR3835-3

100

200

300

400

500

600

700

800

MCR3835-4

MCR3835-5

V_RRM, V_DRM

Volts

MCR3835-6

MCR3835-7

MCR3835-8

MCR3835-9

MCR3835-10

Forward on-state current RMS (all conduction angles)

I_T(RMS)

I_TSM

Amps

Peak surge current

(one cycle, 60Hz, T_J= -40 to +125°C)

Circuit fusing considerations

I²t

A²s

≤ 8.3ms)

(T_J= -40 to +100°C, t

Peak gate power

510

P_GM

P_G(AV)

I_GM

Watts

Amps

Volts

°C

Average gate power

0.5

Peak forward gate current

Peak gate voltage, forward or reverse

Operating junction temperature range

Storage temperature range

Mounting torque

V_GM

T_J

-40 to +125

-40 to +150

T_stg

°C

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with

negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

R_ӨJC

1.2

°C/W

Rev. 20130118

12 3

中文翻译

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