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MCR3835-9 PDF预览

MCR3835-9

更新时间: 2024-11-07 19:31:15
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DIGITRON /
页数 文件大小 规格书
3页 493K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 700; Max TMS Bridge Input Voltage: 22; Max DC Reverse Voltage: 5; Capacitance: 50; Package: DIGI-PF2

MCR3835-9 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.81
Base Number Matches:1

MCR3835-9 数据手册

 浏览型号MCR3835-9的Datasheet PDF文件第2页浏览型号MCR3835-9的Datasheet PDF文件第3页 
MCR3835 SERIES  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS.  
Rating  
Symbol  
Value  
Unit  
Peak repetitive forward and reverse blocking voltage(1)  
MCR3835-1  
MCR3835-2  
MCR3835-3  
MCR3835-4  
MCR3835-5  
MCR3835-6  
MCR3835-7  
MCR3835-8  
MCR3835-9  
MCR3835-10  
25  
50  
100  
200  
300  
400  
500  
600  
700  
800  
VRRM, VDRM  
Volts  
Peak non-repetitive blocking voltage(1)  
MCR3835-1  
25  
MCR3835-2  
50  
MCR3835-3  
100  
200  
300  
400  
500  
600  
700  
800  
MCR3835-4  
MCR3835-5  
VRRM, VDRM  
Volts  
MCR3835-6  
MCR3835-7  
MCR3835-8  
MCR3835-9  
MCR3835-10  
Forward on-state current RMS (all conduction angles)  
IT(RMS)  
ITSM  
35  
Amps  
Amps  
Peak surge current  
(one cycle, 60Hz, TJ = -40 to +125°C)  
35  
Circuit fusing considerations  
I2t  
A2s  
≤ 8.3ms)  
(TJ = -40 to +100°C, t  
Peak gate power  
510  
PGM  
PG(AV)  
IGM  
5
Watts  
Watts  
Amps  
Volts  
°C  
Average gate power  
0.5  
Peak forward gate current  
2
10  
Peak gate voltage, forward or reverse  
Operating junction temperature range  
Storage temperature range  
Mounting torque  
VGM  
TJ  
-40 to +125  
-40 to +150  
30  
Tstg  
°C  
In. lb.  
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with  
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Maximum  
Unit  
Thermal resistance, junction to case  
RӨJC  
1.2  
°C/W  
Rev. 20130118  

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