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MCR264-10-W PDF预览

MCR264-10-W

更新时间: 2024-11-05 13:11:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 栅极触发装置可控硅整流器局域网
页数 文件大小 规格书
4页 92K
描述
40A, 800V, SCR, TO-220AB

MCR264-10-W 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.75Is Samacsys:N
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:50 mA最大直流栅极触发电压:1.5 V
最大维持电流:60 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:40 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:800 V
重复峰值反向电压:800 V表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:SCRBase Number Matches:1

MCR264-10-W 数据手册

 浏览型号MCR264-10-W的Datasheet PDF文件第2页浏览型号MCR264-10-W的Datasheet PDF文件第3页浏览型号MCR264-10-W的Datasheet PDF文件第4页 
Order this document  
by MCR264-4/D  
SEMICONDUCTOR TECHNICAL DATA  
Silicon Controlled Rectifiers  
SCRs  
40 AMPERES RMS  
200 thru 800 VOLTS  
. . . designed for back-to-back SCR output devices for solid state relays or applications  
requiring high surge operation.  
Photo Glass Passivated Blocking Junctions for High Temperature Stability,  
Center Gate for Uniform Parameters  
400 Amperes Surge Capability  
Blocking Voltage to 800 Volts  
G
A
K
CASE 221A-04  
(TO-220AB)  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Peak Repetitive Forward and Reverse Blocking Voltage  
(T = 25 to 125°C, Gate Open)  
V
DRM  
V
RRM  
Volts  
J
MCR264-4  
MCR264-6  
MCR264-8  
MCR264-10  
200  
400  
600  
800  
Forward Current (T = 80°C)  
(All Conduction Angles)  
I
40  
25  
Amps  
Amps  
C
T(RMS)  
I
T(AV)  
Peak Non-repetitive Surge Current – 8.3 ms  
I
400  
450  
TSM  
(1/2 Cycle, Sine Wave)  
Forward Peak Gate Power  
Forward Average Gate Power  
1.5 ms  
P
GM  
20  
0.5  
2
Watts  
Watt  
P
G(AV)  
Forward Peak Gate Current  
(300 µs, 120 PPS)  
I
Amps  
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
–40 to +125  
–40 to +150  
°C  
°C  
J
T
stg  
1. V  
and V  
for alltypes canbe appliedon a continuous basis. Ratings apply for zeroor negativegate voltage;however, positivegate  
RRM  
DRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current  
source such that the voltage ratings of the devices are exceeded.  
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when  
the device is to be used at high sustained currents.  
REV 1  
Motorola, Inc. 1995  

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