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SEMICONDUCTOR TECHNICAL DATA
Reverse Blocking Triode Thyristors
Annular PNPN devices designed for low cost, high volume consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors,
and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA
package which is readily adaptable for use in automatic insertion equipment.
SCRs
0.8 AMPERES RMS
30 and 60 VOLTS
•
•
•
•
Sensitive Gate Trigger Current — 200 µA Maximum
Low Reverse and Forward Blocking Current — 100 µA Maximum, T = 85°C
Low Holding Current — 5 mA Maximum
Passivated Surface for Reliability and Uniformity
C
G
A
K
K
G
A
CASE 29-04
(TO-226AA)
STYLE 10
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
Rating
Symbol
Value
Unit
(2)
Peak Repetitive Forward and Reverse Blocking Voltage
V
DRM
V
RRM
Volts
(T = + 85°C, R = 1 kΩ)
MCR102
MCR103
30
60
C
GK
Forward Current RMS (See Figures 1 & 2)
(All Conduction Angles)
I
0.8
Amps
Amps
T(RMS)
Peak Forward Surge Current, T = 25°C
I
TSM
10
A
(1/2 Cycle, Sine Wave, 60 Hz)
2
I t
2
A s
Circuit Fusing Considerations
(t = 8.3 ms)
0.415
Peak Gate Power — Forward, T = 25°C
P
0.1
0.01
1
Watt
Watt
Amp
A
GM
Average Gate Power — Forward, T = 25°C
P
A
GF(AV)
Peak Gate Current — Forward, T = 25°C
I
GFM
A
(300 µs, 120 PPS)
Peak Gate Voltage — Reverse
Operating Junction Temperature Range @ Rated V
Storage Temperature Range
Lead Solder Temperature
V
4
Volts
°C
GRM
and V
DRM
T
J
–40 to +85
–40 to +150
+ 230
RRM
T
°C
stg
—
°C
(
1/16 from case, 10 s max)
1. Temperature reference point for all case temperature is center of flat portion of package. (T = +85°C unless otherwise noted.)
C
2. V
and V for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate
DRM
RRM
voltagebutpositivegatevoltageshallnotbeappliedconcurrently withanegativepotentialontheanode. Whencheckingforwardorreverse
blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the
rated blocking voltage.
1
Motorola Thyristor Device Data
Motorola, Inc. 1995