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MCR102 PDF预览

MCR102

更新时间: 2024-11-10 22:46:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅整流器
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4页 83K
描述
Silicon Controlled Rectifiers

MCR102 数据手册

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Order this document  
by MCR102/D  
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
Annular PNPN devices designed for low cost, high volume consumer applications  
such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors,  
and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA  
package which is readily adaptable for use in automatic insertion equipment.  
SCRs  
0.8 AMPERES RMS  
30 and 60 VOLTS  
Sensitive Gate Trigger Current — 200 µA Maximum  
Low Reverse and Forward Blocking Current — 100 µA Maximum, T = 85°C  
Low Holding Current — 5 mA Maximum  
Passivated Surface for Reliability and Uniformity  
C
G
A
K
K
G
A
CASE 29-04  
(TO-226AA)  
STYLE 10  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(2)  
Peak Repetitive Forward and Reverse Blocking Voltage  
V
DRM  
V
RRM  
Volts  
(T = + 85°C, R = 1 k)  
MCR102  
MCR103  
30  
60  
C
GK  
Forward Current RMS (See Figures 1 & 2)  
(All Conduction Angles)  
I
0.8  
Amps  
Amps  
T(RMS)  
Peak Forward Surge Current, T = 25°C  
I
TSM  
10  
A
(1/2 Cycle, Sine Wave, 60 Hz)  
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
0.415  
Peak Gate Power — Forward, T = 25°C  
P
0.1  
0.01  
1
Watt  
Watt  
Amp  
A
GM  
Average Gate Power — Forward, T = 25°C  
P
A
GF(AV)  
Peak Gate Current — Forward, T = 25°C  
I
GFM  
A
(300 µs, 120 PPS)  
Peak Gate Voltage — Reverse  
Operating Junction Temperature Range @ Rated V  
Storage Temperature Range  
Lead Solder Temperature  
V
4
Volts  
°C  
GRM  
and V  
DRM  
T
J
–40 to +85  
–40 to +150  
+ 230  
RRM  
T
°C  
stg  
°C  
(
1/16 from case, 10 s max)  
1. Temperature reference point for all case temperature is center of flat portion of package. (T = +85°C unless otherwise noted.)  
C
2. V  
and V for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate  
DRM  
RRM  
voltagebutpositivegatevoltageshallnotbeappliedconcurrently withanegativepotentialontheanode. Whencheckingforwardorreverse  
blocking capability, thyristor devices should not be tested with a constant current source in a manner that the voltage applied exceeds the  
rated blocking voltage.  
Motorola, Inc. 1995  

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