Datasheet > MCR01MZPJ823

MCR01MZPJ823

更新时间： 2024-10-19 12:04:47

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管
页数	文件大小	规格书
16页	176K
描述
NPN SiGe RF Transistor for Low Noise, High-Gain

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MCR01MZPJ823 数据手册

Preliminary Data Sheet

NESG3033M14

R09DS0049EJ0300

Rev.3.00

NPN SiGe RF Transistor for Low Noise, High-Gain

Amplification 4-Pin Lead-Less Minimold (M14, 1208 PKG)

Sep 14, 2012

FEATURES

•

The NESG3033M14 is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP. @ V^CE= 2 V, IC = 6 mA, f = 2.0 GHz

•

Maximum stable power gain: MSG = 20.5 dB TYP. @ V^CE= 2 V, IC = 15 mA, f = 2.0 GHz

SiGe HBT technology (UHS3) adopted: f^max= 110 GHz

This product is improvement of ESD of NESG3032M14.

4-pin lead-less minimold (M14, 1208 PKG)

<R>

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG3033M14

NESG3033M14-A

4-pin lead-less minimold 50 pcs

• 8 mm wide embossed taping

(M14, 1208 PKG)

(Pb-Free)

(Non reel)

10 kpcs/reel

• Pin 1 (Collector), Pin 4 (NC) face the

perforation side of the tape

NESG3033M14-T3 NESG3033M14-T3-A

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Base Current

Symbol

Ratings

Unit

Note 1

VCBO

5.0

4.3

VCEO

Note 1

°C

Collector Current

Note 2

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

150

Tstg

−65 to +150

°C

Notes 1. VCBO and IB are limited by the permissible current of the protection element.

2. Mounted on 1.08 cm²× 1.0 mm (t) glass epoxy PWB

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0049EJ0300 Rev.3.00

Sep 14, 2012

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