MCP618T-I/SL

更新时间： 2024-01-22 09:39:00

品牌	Logo	应用领域
美国微芯 - MICROCHIP		运算放大器放大器电路光电二极管信息通信管理
页数	文件大小	规格书
38页	637K
描述
2.3V to 5.5V Micropower Bi-CMOS Op Amps

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技术参数
数据手册

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MCP618T-I/SL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
Base Number Matches：	1

MCP618T-I/SL 数据手册

MCP616/7/8/9

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, V_DD= +2.3V to +5.5V, V_SS= GND, T_A= 25°C, V_CM= V_DD/2, V_OUT≈ V_DD/2,

R_L= 100 kΩ to V_DD/2 and C_L= 60 pF.

Parameters

Sym

Min

Typ

Max

Units

Conditions

AC Response

Gain Bandwidth Product

Phase Margin

GBWP

—

190

—

kHz

G = +1V/V

Slew Rate

0.08

V/µs

Noise

Input Noise Voltage

Input Noise Voltage Density

Input Noise Current Density

E_ni

e_ni

i_ni

—

2.2

—

µV_P-P

nV/√Hz

fA/√Hz

f = 0.1 Hz to 10 Hz

f = 1 kHz

MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS

Electrical Specifications: Unless otherwise indicated, V_DD= +2.3V to +5.5V, V_SS= GND, T_A= 25°C, V_CM= V_DD/2, V_OUT≈ V_DD/2,

R_L= 100 kΩ to V_DD/2 and C_L= 60 pF.

Parameters

Sym

Min

Typ

Max Units

Conditions

CS Low Specifications

CS Logic Threshold, Low

CS Input Current, Low

V_IL

V_SS

—

0.2 V_DD

—

I_CSL

–1.0

0.01

µA

CS = V_SS

CS High Specifications

CS Logic Threshold, High

CS Input Current, High

V_IH

I_CSH

0.8 V_DD

—

0.01

-0.05

V_DD

—

-2

—

µA

CS = V_DD

GND Current

I_SS

—

Amplifier Output Leakage

CS Dynamic Specifications

CS Low to Amplifier Output Turn-on Time

I_O(LEAK)

t_ON

t_OFF

—

100

—

µs

CS = 0.2V_DDto V_OUT= 0.9V_DD/2,

G = +1 V/V, R_L= 1 kΩ to V_SS

CS High to Amplifier Output High-Z

CS Hysteresis

0.1

0.6

CS = 0.8V_DDto V_OUT= 0.1V_DD/2,

G = +1 V/V, R_L= 1 kΩ to V_SS

V_HYST

—

V_DD= 5.0V

V_IH

V_IL

V_OUT

I_SS

t_OFF

t_ON

High-Z

-19 µA

(typical)

-50 nA

(typical)

-50 nA

(typical)

I_CS

10 nA

(typical)

FIGURE 1-1:

Timing Diagram for the CS

Pin on the MCP618.

DS21613C-page 4

1 2 345 6 7...38

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