是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DFN |
包装说明: | HVSON, SOLCC10,.12,20 | 针数: | 10 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | Factory Lead Time: | 13 weeks |
风险等级: | 5.49 | 其他特性: | NON-VOLATILE MEMORY |
标称带宽: | 1 kHz | 控制接口: | INCREMENT/DECREMENT |
转换器类型: | DIGITAL POTENTIOMETER | JESD-30 代码: | S-PDSO-N10 |
JESD-609代码: | e3 | 长度: | 3 mm |
湿度敏感等级: | 1 | 功能数量: | 2 |
位置数: | 257 | 端子数量: | 10 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | HVSON |
封装等效代码: | SOLCC10,.12,20 | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | 260 |
电源: | 3/5 V | 认证状态: | Not Qualified |
电阻定律: | LINEAR | 最大电阻器端电压: | 5.5 V |
最小电阻器端电压: | 座面最大高度: | 1 mm | |
子类别: | Digital Potentiometers | 标称供电电压: | 2.7 V |
表面贴装: | YES | 技术: | CMOS |
标称温度系数: | 150 ppm/ °C | 温度等级: | AUTOMOTIVE |
端子面层: | Matte Tin (Sn) | 端子形式: | NO LEAD |
端子节距: | 0.5 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 标称总电阻: | 10000 Ω |
宽度: | 3 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCP4662T-103E/ML | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-103E/MS | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-103E/ST | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-103E/UN | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-104E/MF | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-104E/ML | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-104E/MS | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-104E/ST | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-104E/UN | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory | |
MCP4662T-502E/MF | MICROCHIP |
获取价格 |
7/8-Bit Single/Dual I2C Digital POT with Non-Volatile Memory |