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MCP14A1201-E/SNVAO PDF预览

MCP14A1201-E/SNVAO

更新时间: 2024-11-09 19:41:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
30页 864K
描述
Buffer/Inverter Based MOSFET Driver, PDSO8

MCP14A1201-E/SNVAO 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.64
高边驱动器:NO接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8长度:4.9 mm
功能数量:1端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
筛选级别:AEC-Q100座面最大高度:1.75 mm
最大供电电压:18 V最小供电电压:4.5 V
表面贴装:YES温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
Base Number Matches:1

MCP14A1201-E/SNVAO 数据手册

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MCP14A1201/2  
12.0A MOSFET Driver with Low Threshold Input and Enable  
Features  
General Description  
• High Peak Output Current: 12.0A (typical)  
• Wide Input Supply Voltage Operating Range:  
- 4.5V to 18V  
The MCP14A1201/2 devices are high-speed MOSFET  
drivers that are capable of providing up to 12.0A of  
peak current while operating from a single 4.5V to 18V  
supply. There are two output configurations available;  
• Low Shoot-Through/Cross-Conduction Current in  
Output Stage  
inverting  
(MCP14A1201)  
and  
noninverting  
(MCP14A1202). These devices feature low shoot-  
through current, fast rise and fall times, and matched  
propagation delays which make them ideal for high  
switching frequency applications.  
• High Capacitive Load Drive Capability:  
- 15,000 pF in 25 ns (typical)  
• Short Delay Times: 28 ns (tD1), 28 ns (tD2) (typical)  
• Low Supply Current: 360 µA (typical)  
The MCP14A1201/2 family of devices offers enhanced  
control with Enable functionality. The active-high  
Enable pin can be driven low to drive the output of the  
MCP14A1201/2 low, regardless of the status of the  
Input pin. An integrated pull-up resistor allows the user  
to leave the Enable pin floating for standard operation.  
• Low-Voltage Threshold Input and Enable with  
Hysteresis  
• Latch-Up Protected: Withstands 500 mA Reverse  
Current  
• Space-Saving Packages:  
- 8-Lead MSOP  
These devices are highly latch-up resistant under any  
condition within their power and voltage ratings. They  
can accept up to 500 mA of reverse current being  
forced back into their outputs without damage or logic  
upset. All terminals are fully protected against  
electrostatic discharge (ESD) up to 2 kV (HBM) and  
200V (MM).  
- 8-Lead SOIC  
- 8-Lead 2 x 3 TDFN  
Applications  
• Switch Mode Power Supplies  
• Pulse Transformer Drive  
• Line Drivers  
Package Types  
MCP14A1201/MCP14A1202  
• Level Translator  
MSOP/SOIC  
• Motor and Solenoid Drive  
VDD  
IN  
VDD  
1
2
8
7
OUT/OUT  
EN  
OUT/OUT  
GND  
3
4
6
5
GND  
MCP14A1201/MCP14A1202  
2 x 3 TDFN*  
VDD  
VDD  
1
2
8
7
IN  
EN  
OUT/OUT  
OUT/OUT  
GND  
EP  
9
3
4
6
5
GND  
* Includes Exposed Thermal Pad (EP); see Table 3-1.  
2019 Microchip Technology Inc.  
DS20006228A-page 1  

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