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MCP1259T-EUN PDF预览

MCP1259T-EUN

更新时间： 2024-11-18 03:03:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 泵
页数 文件大小 规格书
24页 1287K
描述
Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mode

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中文翻译

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MCP1259T-EUN 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TSSOP
包装说明：TSSOP, TSSOP10,.19,20针数：10
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：17 weeks
风险等级：5.21模拟集成电路 - 其他类型：SWITCHED CAPACITOR REGULATOR
控制模式：VOLTAGE-MODE最大输入电压：3.6 V
最小输入电压：1.8 V标称输入电压：2 V
JESD-30 代码：S-PDSO-G10JESD-609代码：e3
长度：3 mm湿度敏感等级：1
功能数量：1端子数量：10
最高工作温度：125 °C最低工作温度：-40 °C
最大输出电流：0.1 A封装主体材料：PLASTIC/EPOXY
封装代码：TSSOP封装等效代码：TSSOP10,.19,20
封装形状：SQUARE封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1.1 mm子类别：Switching Regulator or Controllers
表面贴装：YES最大切换频率：650 kHz
技术：MOS温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：3 mm
Base Number Matches：1

MCP1259T-EUN 数据手册

 浏览型号MCP1259T-EUN的Datasheet PDF文件第2页浏览型号MCP1259T-EUN的Datasheet PDF文件第3页浏览型号MCP1259T-EUN的Datasheet PDF文件第4页浏览型号MCP1259T-EUN的Datasheet PDF文件第5页浏览型号MCP1259T-EUN的Datasheet PDF文件第6页浏览型号MCP1259T-EUN的Datasheet PDF文件第7页 
MCP1256/7/8/9  
Regulated 3.3V, Low-Ripple Charge Pump with Low-  
Operating Current SLEEP Mode or BYPASS Mode  
Features  
Description  
The MCP1256, MCP1257, MCP1258 and MCP1259  
are inductorless, positive regulated charge pump  
DC/DC converters. The devices generate a regulated  
3.3V output voltage from a 1.8V to 3.6V input. The  
devices are specifically designed for applications  
operating from 2-cell alkaline, Ni-Cd, or Ni-MH  
batteries or by one primary lithium MnO2 (or similar)  
coin cell battery.  
• Inductorless 1.5x, 2x Boost DC/DC Converter  
• Output Voltage: 3.3V  
• High Output Voltage Accuracy:  
- ±3.0% (VOUT Fixed)  
• Output Current Up To 100 mA  
• 20 mVPP Output Voltage Ripple  
• Thermal Shutdown and Short Circuit Protection  
• Uses Small Ceramic Capacitors  
• Switching Frequency: 650 kHz  
• Low-Power SLEEP Mode: MCP1256/7  
• BYPASS Mode: MCP1258/9  
The MCP1256, MCP1257, MCP1258 and MCP1259  
provide high efficiency by automatically switching  
between 1.5x and 2x boost operation. In addition, at  
light output loads, the MCP1256 and MCP1257 can be  
placed in a SLEEP mode, lowering the quiescent  
current while maintaining the regulated output voltage.  
Alternatively, the MCP1258 and MCP1259 provide a  
BYPASS feature connecting the input voltage to the  
• Low-Power Shutdown Mode: 0.1 μA (Typical)  
• Shutdown Input Compatible with 1.8V Logic  
• VIN Range: 1.8V to 3.6V  
output.  
This  
allows  
for  
real-time  
clocks,  
• Soft-Start Circuitry to Minimize Inrush Current  
• Temperature Range: -40°C to +125°C  
• Packaging:  
microcontrollers or other system devices to remain  
biased with virtually no current being consumed by the  
MCP1258 or MPC1259.  
- 10-Pin, 3 mm x 3 mm DFN  
In normal operation, the output voltage ripple is below  
20 mVPP at load currents up to 100 mA. Normal opera-  
tion occurs at a fixed switching frequency of 650 kHz,  
avoiding interference with sensitive IF bands.  
- 10-Pin, MSOP  
Applications  
The MCP1256 and MCP1258 feature a power-good  
output that can be used to detect out-of-regulation  
conditions. The MCP1257 and MCP1259 feature a low-  
battery indication that issues a warning if the input  
voltage drops below a preset voltage threshold.  
Extremely low supply current and few external parts (4  
capacitors) make these devices ideal for small, battery-  
powered applications. A Shutdown mode is also  
provided for further power reduction.  
• Pagers  
• Portable Measurement Instruments  
• Home Automation Products  
• PICmicro® MCU Bias  
Typical Application  
MCP1256  
OUTPUT  
3.3V  
INPUT  
1.8V to 3.6V  
7
5
1
V
V
IN  
OUT  
C
C
OUT  
10 μF  
The devices incorporate thermal and short-circuit pro-  
tection. Two package offerings are provided: 10-pin  
MSOP and 10-lead 3 mm x 3 mm DFN. The devices  
are completely characterized over the junction temper-  
ature range of -40°C to +125°C.  
IN  
R
10  
1
10 μF  
SHDN  
PGOOD  
Power-Good  
Indication  
4
8
6
3
C +  
1
C +  
2
C
1 μF  
C
2
1 μF  
1
C -  
1
C -  
2
2
SLEEP  
GND  
ON / OFF  
9
Typical Application with Power-Good Indication  
© 2006 Microchip Technology Inc.  
DS21989A-page 1  
1234567...24

中文翻译

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