Datasheet > 电源电路 > 开关式稳压器或控制器> MCP1256-EUN

MCP1256-EUN

更新时间： 2024-11-20 04:40:27

品牌	Logo	应用领域
美国微芯 - MICROCHIP		稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管泵
页数	文件大小	规格书
24页	1287K
描述
Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MCP1256-EUN 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TSSOP
包装说明：	PLASTIC, MO-187BA, MSOP-10	针数：	10
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	Factory Lead Time：	6 weeks
风险等级：	5.22	Is Samacsys：	N
模拟集成电路 - 其他类型：	SWITCHED CAPACITOR REGULATOR	控制模式：	VOLTAGE-MODE
最大输入电压：	3.6 V	最小输入电压：	1.8 V
标称输入电压：	2 V	JESD-30 代码：	S-PDSO-G10
JESD-609代码：	e3	长度：	3 mm
湿度敏感等级：	1	功能数量：	1
端子数量：	10	最高工作温度：	125 °C
最低工作温度：	-40 °C	最大输出电流：	0.1 A
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP10,.19,20	封装形状：	SQUARE
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.1 mm
子类别：	Switching Regulator or Controllers	表面贴装：	YES
最大切换频率：	650 kHz	技术：	MOS
温度等级：	AUTOMOTIVE	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	3 mm	Base Number Matches：	1

MCP1256-EUN 数据手册

MCP1256/7/8/9

Regulated 3.3V, Low-Ripple Charge Pump with Low-

Operating Current SLEEP Mode or BYPASS Mode

Features

Description

The MCP1256, MCP1257, MCP1258 and MCP1259

are inductorless, positive regulated charge pump

DC/DC converters. The devices generate a regulated

3.3V output voltage from a 1.8V to 3.6V input. The

devices are specifically designed for applications

operating from 2-cell alkaline, Ni-Cd, or Ni-MH

batteries or by one primary lithium MnO2 (or similar)

coin cell battery.

• Inductorless 1.5x, 2x Boost DC/DC Converter

• Output Voltage: 3.3V

• High Output Voltage Accuracy:

- ±3.0% (V_OUTFixed)

• Output Current Up To 100 mA

• 20 mV_PPOutput Voltage Ripple

• Thermal Shutdown and Short Circuit Protection

• Uses Small Ceramic Capacitors

• Switching Frequency: 650 kHz

• Low-Power SLEEP Mode: MCP1256/7

• BYPASS Mode: MCP1258/9

The MCP1256, MCP1257, MCP1258 and MCP1259

provide high efficiency by automatically switching

between 1.5x and 2x boost operation. In addition, at

light output loads, the MCP1256 and MCP1257 can be

placed in a SLEEP mode, lowering the quiescent

current while maintaining the regulated output voltage.

Alternatively, the MCP1258 and MCP1259 provide a

BYPASS feature connecting the input voltage to the

• Low-Power Shutdown Mode: 0.1 μA (Typical)

• Shutdown Input Compatible with 1.8V Logic

• V_INRange: 1.8V to 3.6V

output.

This

allows

for

real-time

clocks,

• Soft-Start Circuitry to Minimize Inrush Current

• Temperature Range: -40°C to +125°C

• Packaging:

microcontrollers or other system devices to remain

biased with virtually no current being consumed by the

MCP1258 or MPC1259.

- 10-Pin, 3 mm x 3 mm DFN

In normal operation, the output voltage ripple is below

20 mV_PPat load currents up to 100 mA. Normal opera-

tion occurs at a fixed switching frequency of 650 kHz,

avoiding interference with sensitive IF bands.

- 10-Pin, MSOP

Applications

The MCP1256 and MCP1258 feature a power-good

output that can be used to detect out-of-regulation

conditions. The MCP1257 and MCP1259 feature a low-

battery indication that issues a warning if the input

voltage drops below a preset voltage threshold.

Extremely low supply current and few external parts (4

capacitors) make these devices ideal for small, battery-

powered applications. A Shutdown mode is also

provided for further power reduction.

• Pagers

• Portable Measurement Instruments

• Home Automation Products

• PICmicro^®MCU Bias

Typical Application

MCP1256

OUTPUT

3.3V

INPUT

1.8V to 3.6V

OUT

10 μF

The devices incorporate thermal and short-circuit pro-

tection. Two package offerings are provided: 10-pin

MSOP and 10-lead 3 mm x 3 mm DFN. The devices

are completely characterized over the junction temper-

ature range of -40°C to +125°C.

10 μF

SHDN

PGOOD

Power-Good

Indication

C +

1 μF

C -

SLEEP

GND

ON / OFF

Typical Application with Power-Good Indication

DS21989A-page 1

12 3 4 5 6 7...24

中文翻译

下载PDF

与MCP1256-EUN相关器件

型号	品牌	获取价格	描述	数据表
MCP1256T-EMF	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1256T-EUN	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1257	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1257-EMF	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1257-EUN	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1257T-EMF	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1257T-EUN	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1258	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1258-EMF	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo
MCP1258-EUN	MICROCHIP	获取价格	Regulated 3.3V, Low-Ripple Charge Pump with Low- Operating Current SLEEP Mode or BYPASS Mo

与MCP1256-EUN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

MCP1256-EUN

MCP1256-EUN 技术参数

MCP1256-EUN 数据手册

与MCP1256-EUN相关器件

与MCP1256-EUN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCP1256-EUN

MCP1256-EUN 技术参数

MCP1256-EUN 数据手册

与MCP1256-EUN相关器件

与MCP1256-EUN相关文章

您还可以找

您在本页遇到什么问题？