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MCM64ZA18ZP8R PDF预览

MCM64ZA18ZP8R

更新时间: 2024-11-25 14:53:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 静态存储器内存集成电路
页数 文件大小 规格书
34页 230K
描述
1MX18 ZBT SRAM, 8ns, PBGA119, PLASTIC, BGA-119

MCM64ZA18ZP8R 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA119,7X17,50
针数:119Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:8 ns
其他特性:ALSO REQUIRES 2.5V I/O SUPPLYI/O 类型:COMMON
JESD-30 代码:R-PBGA-B119JESD-609代码:e0
长度:22 mm内存密度:18874368 bit
内存集成电路类型:ZBT SRAM内存宽度:18
功能数量:1端子数量:119
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA119,7X17,50
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5 V认证状态:Not Qualified
座面最大高度:2.4 mm最大待机电流:0.01 A
最小待机电流:2.4 V子类别:SRAMs
最大压摆率:0.29 mA最大供电电压 (Vsup):2.625 V
最小供电电压 (Vsup):2.375 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

MCM64ZA18ZP8R 数据手册

 浏览型号MCM64ZA18ZP8R的Datasheet PDF文件第2页浏览型号MCM64ZA18ZP8R的Datasheet PDF文件第3页浏览型号MCM64ZA18ZP8R的Datasheet PDF文件第4页浏览型号MCM64ZA18ZP8R的Datasheet PDF文件第5页浏览型号MCM64ZA18ZP8R的Datasheet PDF文件第6页浏览型号MCM64ZA18ZP8R的Datasheet PDF文件第7页 
MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Order this document  
by MCM64Z936/D  
MCM64Z936  
MCM64ZA18  
Product Preview  
512K x 36 and 1M x 18 Bit  
ZBTr Fast Static RAM  
The ZBT RAM is a 16M–bit synchronous fast static RAM designed to provide  
Zero Bus Turnaroundr. The ZBT RAM allows 100% use of bus cycles during  
back–to–back read/write and write/read cycles. The MCM64Z936 (organized as  
512K words by 36 bits) and the MCM64ZA18 (organized as 1M words by 18 bits)  
are fabricated in Motorola’s high performance silicon gate CMOS technology.  
Thisdeviceintegratesinputregisters, anoutputregister, a2–bitaddresscounter,  
and high speed SRAM onto a single monolithic circuit for reduced parts count in  
communication applications. Synchronous design allows precise cycle control  
with the use of an external positive–edge–triggered clock (CK). CMOS circuitry  
reduces the overall power consumption of the integrated functions for greater  
reliability.  
TQ PACKAGE  
TQFP  
CASE 983A–01  
ZP PACKAGE  
PBGA  
CASE 999–02  
Addresses (SA), data inputs (DQ), and all control signals except output enable  
(G), sleep mode (ZZ), and linear burst order (LBO) are clock (CK) controlled  
through positive–edge–triggered noninverting registers.  
Write cycles are internally self–timed and are initiated by the rising edge of the  
clock (CK) input. This feature eliminates complex off–chip write pulse generation  
and provides increased timing flexibility for incoming signals. Write data is  
supplied to the memory one cycle after the write sequence initiation for the flow–  
through mode, and two cycles after the write sequence initiation for the pipelined  
mode.  
For flow–through read cycles, the SRAM allows output data to simply flow freely from the memory  
array. For pipelined read cycles, the SRAM output data is temporarily stored by an edge–triggered  
output register and then released to the output buffers at the next rising edge of clock (CK).  
TheMCM64Z936andMCM64ZA18operatefroma2.5Vcorepowersupply, andalloutputsoper-  
ate on a 2.5 V power supply. All inputs and outputs are JEDEC Standard JESD8–5 compatible.  
2.5 V ±5% Core Power Supply, 2.5 V I/O Supply  
MCM64Z936/A18–7 = 7 ns Flow–Through Access/2.6 ns Pipelined Access (225 MHz)  
MCM64Z936/A18–8 = 8 ns Flow–Through Access/3 ns Pipelined Access (200 MHz)  
MCM64Z936/A18–8.5 = 8.5 ns Flow–Through Access/3.5 ns Pipelined Access (166 MHz)  
Selectable Read/Write Functionality (Flow–Through/Pipelined)  
Selectable Burst Sequencing Order (Linear/Interleaved)  
Internally Self–Timed Write Cycle  
Two–Cycle Deselect (Pipelined)  
Byte Write Control  
ADV Controlled Burst  
Simplified JTAG  
100–Pin TQFP and 119–Bump PBGA Packages  
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by  
Micron Technology, Inc. and Motorola, Inc.  
This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.  
1/14/00  
Motorola, Inc. 2000  

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