Datasheet > MCM64E918FC3.3R

MCM64E918FC3.3R

更新时间： 2024-11-20 19:07:59

品牌	Logo	应用领域
恩智浦 - NXP		双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
22页	424K
描述
IC,SYNC SRAM,SDR/DDR,512KX18,CMOS,BGA,153PIN,PLASTIC

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MCM64E918FC3.3R 技术参数

生命周期：	Transferred	零件包装代码：	BGA
包装说明：	BGA,	针数：	153
Reach Compliance Code：	unknown	风险等级：	5.67
其他特性：	PIPELINED ARCHITECTURE	JESD-30 代码：	R-PBGA-B153
长度：	22 mm	内存密度：	9437184 bit
内存集成电路类型：	DDR SRAM	内存宽度：	18
功能数量：	1	端子数量：	153
字数：	524288 words	字数代码：	512000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	512KX18
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	认证状态：	Not Qualified
座面最大高度：	2.77 mm	最大供电电压 (Vsup)：	2.625 V
最小供电电压 (Vsup)：	2.375 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	BALL
端子节距：	1.27 mm	端子位置：	BOTTOM
宽度：	14 mm	Base Number Matches：	1

MCM64E918FC3.3R 数据手册

Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA

MOTOROLA

Order this document

by MCM64E918/D

MCM64E918

MCM64E836

8MB Double Data Rate HSTL I/O

Fast SRAM

The MCM64E918/MCM64E836 are 8M–bit pipelined burst synchronous late

write fast static RAMs designed to provide very high data bandwidth in secondary

cache applications. The MCM64E918 (organized as 512K words by 18 bits wide)

and the MCM64E836 (organized as 256K words by 36 bits wide) are fabricated

in Motorola’s high performance silicon gate MOS technology.

The differential clock (CK) inputs control the timing of read/write operations of

the RAM. At the rising edge of CK, all addresses and burst control inputs are reg-

istered. An internal buffer and special logic enables the memory to accept write

data on the rising or rising and falling edges of the clock, a cycle following address

and control signals. Read data is driven on the rising or rising and falling edges

of the CK clock and is referenced to echo clock (CQ and CQ) outputs.

The MCM64E918/MCM64E836 have HSTL inputs and outputs. The adjust-

able input trip–point (V_ref) and output power supply voltage (V_DDQ) gives

the system designer greater flexibility in optimizing system performance.

The impedance of the output buffers is programmable, allowing the outputs to

match the impedance of the circuit traces, which reduces signal reflections.

FC PACKAGE

FLIPPED CHIP PBGA

CASE 1107C–03

• Single 2.5 V 5% Power Supply

• Single Data Rate (SDR) and Double Data Rate (DDR) Burst Read and

Write

• Pin Selectable Linear or Interleaved Burst Order

• Four Tick Burst with Automatic Wrap–Around

• Differential Clock Inputs

• Active High and Active Low Echo Clock Outputs

• 1.8 V Expanded HSTL — I/O (JEDEC Standard JESD8–6 Class I

Compatible)

• 1.8 V Expanded HSTL — Compatible Programmable Impedance Output

Drivers

• Pipelined (Register to Register) Synchronous Operation

• Boundary Scan (JTAG) IEEE 1149.1 Compatible

• Stop Clock Functionality Supported

• Optional x18 or x36 Organization

• MCM64E918/MCM64E836–3.0 = 3.0 ns Clock Cycle Time

MCM64E918/MCM64E836–3.3 = 3.3 ns Clock Cycle Time

MCM64E918/MCM64E836–4.0 = 4.0 ns Clock Cycle Time

• 9 x 17 (153) Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Flipped Chip

Plastic Ball Grid Array (PBGA) package

REV2

7/2/01

 Motorola, Inc. 2001

MOTOROLA FAST SRAM

MCM64E918•MCM64E836

For More Information On This Product,

Go to: www.freescale.com

12 3 4 5 6 7...22

中文翻译

下载PDF

与MCM64E918FC3.3R相关器件

型号	品牌	获取价格	描述	数据表
MCM64E918FC4.0	NXP	获取价格	IC,SYNC SRAM,SDR/DDR,512KX18,CMOS,BGA,153PIN,PLASTIC
MCM64E918FC4.0	MOTOROLA	获取价格	512KX18 DDR SRAM, 0.2ns, PBGA153, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-153
MCM64E918FC4.0R	NXP	获取价格	512KX18 DDR SRAM, PBGA153, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-153
MCM64E918FC4.4	MOTOROLA	获取价格	512KX18 DDR SRAM, 0.2ns, PBGA153, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-153
MCM64E918FC4.4R	MOTOROLA	获取价格	DDR SRAM, 512KX18, 0.2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BG
MCM64E918FC5.0	MOTOROLA	获取价格	DDR SRAM, 512KX18, 0.2ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BG
MCM64E918RS3.0	MOTOROLA	获取价格	DDR SRAM, 512KX18, 0.2ns, CMOS, CBGA153, 14 X 22 MM, 1.27 MM PITCH, CERAMIC, FLIP CHIP, BG
MCM64E918RS3.3	MOTOROLA	获取价格	DDR SRAM, 512KX18, 0.2ns, CMOS, CBGA153, 14 X 22 MM, 1.27 MM PITCH, CERAMIC, FLIP CHIP, BG
MCM64E918RS3.3R	MOTOROLA	获取价格	DDR SRAM, 512KX18, 0.2ns, CMOS, CBGA153, 14 X 22 MM, 1.27 MM PITCH, CERAMIC, FLIP CHIP, BG
MCM64E918RS4.0	MOTOROLA	获取价格	DDR SRAM, 512KX18, 0.2ns, CMOS, CBGA153, 14 X 22 MM, 1.27 MM PITCH, CERAMIC, FLIP CHIP, BG

与MCM64E918FC3.3R相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM64E918FC3.3R

MCM64E918FC3.3R 技术参数

MCM64E918FC3.3R 数据手册

与MCM64E918FC3.3R相关器件

与MCM64E918FC3.3R相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCM64E918FC3.3R

MCM64E918FC3.3R 技术参数

MCM64E918FC3.3R 数据手册

与MCM64E918FC3.3R相关器件

与MCM64E918FC3.3R相关文章

您还可以找

您在本页遇到什么问题？