Datasheet > MCM63Z737TQ11R

MCM63Z737TQ11R

更新时间： 2024-11-25 11:05:59

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		内存集成电路静态存储器
页数	文件大小	规格书
20页	222K
描述
128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM

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MCM63Z737TQ11R 数据手册

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SEMICONDUCTOR TECHNICAL DATA

MCM63Z737

MCM63Z819

Advance Information

128K x 36 and 256K x 18 Bit

Flow–Through ZBT RAM

Synchronous Fast Static RAM

The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide

zero bus turnaround. The ZBT RAM allows 100% use of bus cycles during

back–to–back read/write and write/read cycles. The MCM63Z737 is organized

as 128K words of 36 bits each and the MCM63Z819 is organized as 256K words

of 18 bits each, fabricated with high performance silicon gate CMOS technology.

This device integrates input registers, a 2–bit address counter, and high speed

SRAM onto a single monolithic circuit for reduced parts count in communication

applications. Synchronous design allows precise cycle control with the use of an

external clock (CK). CMOS circuitry reduces the overall power consumption of

the integrated functions for greater reliability.

TQ PACKAGE

TQFP

CASE 983A–01

Addresses (SA), data inputs (DQ), and all control signals except output enable

(G) and linear burst order (LBO) are clock (CK) controlled through positive–

edge–triggered noninverting registers.

Write cycles are internally self–timed and are initiated by the rising edge of the

clock (CK) input. This feature eliminates complex off–chip write pulse generation

and provides increased timing flexibility for incoming signals.

For read cycles, a flow–through SRAM allows output data to simply flow freely

from the memory array.

•

3.3 V LVTTL and LVCMOS Compatible

MCM63Z737/MCM63Z819–11 = 11 ns Access/15 ns Cycle (66 MHz)

MCM63Z737/MCM63Z819–15 = 15 ns Access/20 ns Cycle (50 MHz)

Selectable Burst Sequencing Order (Linear/Interleaved)

Internally Self–Timed Write Cycle

Single–Cycle Deselect

Byte Write Control

ADV Controlled Burst

100–Pin TQFP Package

•

ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by

Micron Technology, Inc. and Motorola, Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

2/6/98

Motorola, Inc. 1998

MOTOROLA FAST SRAM

MCM63Z737 MCM63Z819

12 3 4 5 6 7...20

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与MCM63Z737TQ11R相关器件

型号	品牌	获取价格	描述	数据表
MCM63Z737TQ15	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
MCM63Z737TQ15	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
MCM63Z737TQ15	NXP	获取价格	128KX36 ZBT SRAM, 15ns, PQFP100, TQFP-100
MCM63Z737TQ15R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
MCM63Z737TQ15R	FREESCALE	获取价格	128K x 36 and 256K x 18 Bit Flow-Through ZBT RAM Synchronous Fast Static RAM
MCM63Z737TQ15R	NXP	获取价格	128KX36 ZBT SRAM, 15ns, PQFP100, TQFP-100
MCM63Z818TQ100	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
MCM63Z818TQ100R	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
MCM63Z818TQ133	MOTOROLA	获取价格	128K x 36 and 256K x 18 Bit Pipelined ZBT RAM Synchronous Fast Static RAM
MCM63Z818TQ133143R	MOTOROLA	获取价格	256KX18 ZBT SRAM, 4ns, PQFP100, TQFP-100

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