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MCM36400ASG70 PDF预览

MCM36400ASG70

更新时间: 2024-11-09 17:30:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 动态存储器内存集成电路
页数 文件大小 规格书
14页 320K
描述
Fast Page DRAM Module, 4MX36, 70ns, CMOS, SIMM-72

MCM36400ASG70 技术参数

生命周期:Obsolete零件包装代码:SIMM
包装说明:SIMM, SSIM72针数:72
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.24风险等级:5.84
访问模式:FAST PAGE最长访问时间:70 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH备用内存宽度:18
JESD-30 代码:R-XSMA-N72内存密度:150994944 bit
内存集成电路类型:FAST PAGE DRAM MODULE内存宽度:36
功能数量:1端口数量:1
端子数量:72字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX36输出特性:3-STATE
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
刷新周期:2048最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子位置:SINGLEBase Number Matches:1

MCM36400ASG70 数据手册

 浏览型号MCM36400ASG70的Datasheet PDF文件第2页浏览型号MCM36400ASG70的Datasheet PDF文件第3页浏览型号MCM36400ASG70的Datasheet PDF文件第4页浏览型号MCM36400ASG70的Datasheet PDF文件第5页浏览型号MCM36400ASG70的Datasheet PDF文件第6页浏览型号MCM36400ASG70的Datasheet PDF文件第7页 
Order this document  
by MCM36400/D  
SEMICONDUCTOR  
TECHNICAL DATA  
MCM36400  
4M x 36 Bit Dynamic Random  
Access Memory Module  
The MCM36400 is a dynamic random access memory (DRAM) module organized  
as 4,194,304 x 36 bits. The module is a 72–lead single–in–line memory module  
(SIMM) consisting of eight MCM517400B DRAMs, housed in 300 mil J–lead small  
outline packages (SOJ), and four MCM54100AN DRAMs housed in 300 mil J–lead  
small outline packages (SOJ), mounted on a substrate along with a 0.22 µF (min)  
decoupling capacitor mounted adjacent to each DRAM. The MCM517400B is a  
CMOS high–speed dynamic random access memory organized as 4,194,304 four–  
bit words and fabricated with CMOS silicon–gate process technology.  
AS PACKAGE  
SIMM MODULE  
CASE 866J–01  
ASH PACKAGE  
SIMM MODULE  
(LOW PROFILE)  
CASE 866–02  
TOP VIEW  
1
Three–State Data Output  
Early–Write Common I/O Capability  
Fast Page Mode Capability  
TTL–Compatible Inputs and Outputs  
RAS–Only Refresh  
CAS Before RAS Refresh  
Hidden Refresh  
2048 Cycle Refresh: 32 ms  
Consists of Eight 4M x 4 DRAMs, Four 4M x 1 DRAMs, and Twelve 0.22 µF (Min)  
Decoupling Capacitors  
36  
37  
Unlatched Data Out at Cycle End Allows Two Dimensional Chip Selection  
Fast Access Time (t  
RAC  
): MCM36400–60 = 60 ns (Max)  
MCM36400–70 = 70 ns (Max)  
Low Active Power Dissipation: MCM36400–60 = 7.48 W (Max)  
MCM36400–70 = 6.38 W (Max)  
Low Standby Power Dissipation: TTL Levels = 132 mW (Max)  
CMOS Levels = 66 mW (Max)  
Available in Doublesided, Low Profile Module (MCM36400ASH)  
PIN ASSIGNMENTS  
Pin  
1
Name  
Pin  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
Name  
A1  
Pin  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
Name  
DQ24  
DQ7  
DQ25  
A7  
Pin  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
Name  
DQ17  
DQ35  
Pin  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
Name  
DQ9  
Pin  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
Name  
DQ14  
DQ33  
DQ15  
DQ34  
DQ16  
NC  
V
SS  
2
DQ0  
DQ18  
DQ1  
A2  
DQ27  
DQ10  
DQ28  
DQ11  
DQ29  
DQ12  
DQ30  
DQ13  
DQ31  
72  
3
A3  
V
SS  
4
A4  
CAS0  
CAS2  
CAS3  
CAS1  
RAS0  
NC  
5
DQ19  
DQ2  
A5  
NC  
PIN NAMES  
6
A6  
V
CC  
A0 – A10 . . . . . . . . . . . . . Address Inputs  
DQ0 – DQ35 . . . . . . . Data Input/Output  
CAS0 – CAS3 Column Address Strobe  
PD1 – PD4 . . . . . . . . . Presence Detect  
RAS0, RAS2 . . . . . Row Address Strobe  
W . . . . . . . . . . . . . . . . . Read/Write Input  
7
DQ20  
DQ3  
A10  
DQ4  
DQ22  
DQ5  
DQ23  
DQ6  
A8  
A9  
PD1  
8
PD2  
9
DQ21  
NC  
PD3  
10  
11  
12  
V
RAS2  
DQ26  
DQ8  
NC  
PD4  
CC  
V
V
. . . . . . . . . . . . . . . . . . Power (+ 5 V)  
. . . . . . . . . . . . . . . . . . . . . . . Ground  
CC  
SS  
NC  
A0  
W
V
NC  
CC  
NC . . . . . . . . . . . . . . . . . . No Connection  
NC  
DQ32  
V
SS  
All power supply and ground pins must be  
connected for proper operation of the  
device.  
REV 2  
10/95  
Motorola, Inc. 1995  

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