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MCD431-20IO2 PDF预览

MCD431-20IO2

更新时间: 2024-11-06 20:59:59
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网栅极
页数 文件大小 规格书
10页 428K
描述
Silicon Controlled Rectifier, 2000V V(DRM), 2000V V(RRM), 1 Element, MODULE-5

MCD431-20IO2 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PUFM-X5
Reach Compliance Code:compliant风险等级:5.68
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最大直流栅极触发电流:250 mAJESD-30 代码:R-PUFM-X5
元件数量:1端子数量:5
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT断态重复峰值电压:2000 V
重复峰值反向电压:2000 V表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
触发设备类型:SCRBase Number Matches:1

MCD431-20IO2 数据手册

 浏览型号MCD431-20IO2的Datasheet PDF文件第2页浏览型号MCD431-20IO2的Datasheet PDF文件第3页浏览型号MCD431-20IO2的Datasheet PDF文件第4页浏览型号MCD431-20IO2的Datasheet PDF文件第5页浏览型号MCD431-20IO2的Datasheet PDF文件第6页浏览型号MCD431-20IO2的Datasheet PDF文件第7页 
Date: 15.10.2014  
IXYS  
Data Sheet Issue: 2  
Thyristor/Diode Modules M## 431  
Absolute Maximum Ratings  
VRRM  
VDRM  
[V]  
MCC  
MCA  
MCK  
MCD  
MDC  
2000  
2200  
2400  
431-20io2  
431-22io2  
431-24io2  
431-20io2  
431-22io2  
431-24io2  
431-20io2  
431-22io2  
431-24io2  
431-20io2  
431-22io2  
431-24io2  
431-20io2  
431-22io2  
431-24io2  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
Repetitive peak off-state voltage 1)  
Non-repetitive peak off-state voltage 1)  
Repetitive peak reverse voltage 1)  
Non-repetitive peak reverse voltage 1)  
2000-2400  
2100-2500  
2000-2400  
2100-2500  
V
V
V
V
VDSM  
VRRM  
VRSM  
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
Maximum average on-state current, TC = 85°C 2)  
Maximum average on-state current. TC = 100°C 2)  
429  
296  
A
A
IT(RMS)M Nominal RMS on-state current, TC = 55°C 2)  
1020  
809  
A
IT(d.c.)  
ITSM  
ITSM2  
I2t  
D.C. on-state current, TC = 55°C  
A
3)  
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM  
10.9  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
Peak non-repetitive surge tp = 10 ms, VRM 10V 3)  
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM  
12.0  
594×103  
720×103  
200  
3)  
I2t  
I2t capacity for fusing tp = 10 ms, VRM 10 V 3)  
Critical rate of rise of on-state current (repetitive) 4)  
Critical rate of rise of on-state current (non-repetitive) 4)  
Peak reverse gate voltage  
(di/dt)cr  
400  
VRGM  
PG(AV)  
PGM  
5
Mean forward gate power  
4
W
Peak forward gate power  
30  
W
VISOL  
Tvj op  
Tstg  
Isolation Voltage 5)  
3000  
-40 to +125  
-40 to +125  
V
Operating temperature range  
°C  
°C  
Storage temperature range  
Notes:  
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.  
2) Single phase; 50 Hz, 180° half-sinewave.  
3) Half-sinewave, 125°C Tvj initial.  
4) VD = 67% VDRM, IFG = 2 A, tr 0.5µs, TC = 125°C.  
5) AC RMS voltage, 50 Hz, 1min test  
Rating Report. Types M##431-20io2 and M##431-24io2 Issue 2  
Page 1 of 10  
October, 2014  

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