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MC34151DR2 PDF预览

MC34151DR2

更新时间: 2024-11-20 22:09:39
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
12页 287K
描述
High Speed Dual MOSFET Drivers

MC34151DR2 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOIC-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.18Is Samacsys:N
高边驱动器:NO接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm湿度敏感等级:1
功能数量:2端子数量:8
最高工作温度:70 °C最低工作温度:
标称输出峰值电流:1.5 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:12 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:MOSFET Drivers最大供电电压:18 V
最小供电电压:6.5 V标称供电电压:12 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
断开时间:0.1 µs接通时间:0.1 µs
宽度:3.9 mmBase Number Matches:1

MC34151DR2 数据手册

 浏览型号MC34151DR2的Datasheet PDF文件第2页浏览型号MC34151DR2的Datasheet PDF文件第3页浏览型号MC34151DR2的Datasheet PDF文件第4页浏览型号MC34151DR2的Datasheet PDF文件第5页浏览型号MC34151DR2的Datasheet PDF文件第6页浏览型号MC34151DR2的Datasheet PDF文件第7页 
The MC34151/MC33151 are dual inverting high speed drivers  
specifically designed for applications that require low current digital  
circuitry to drive large capacitive loads with high slew rates. These  
devices feature low input current making them CMOS and LSTTL  
logic compatible, input hysteresis for fast output switching that is  
independent of input transition time, and two high current totem pole  
outputs ideally suited for driving power MOSFETs. Also included is  
an undervoltage lockout with hysteresis to prevent erratic system  
operation at low supply voltages.  
http://onsemi.com  
MARKING  
DIAGRAMS  
8
PDIP–8  
P SUFFIX  
CASE 626  
MC3x151P  
AWL  
YYWW  
Typical applications include switching power supplies, dc to dc  
converters, capacitor charge pump voltage doublers/inverters, and  
motor controllers.  
8
1
1
These devices are available in dual–in–line and surface mount  
packages.  
Two Independent Channels with 1.5 A Totem Pole Output  
Output Rise and Fall Times of 15 ns with 1000 pF Load  
CMOS/LSTTL Compatible Inputs with Hysteresis  
Undervoltage Lockout with Hysteresis  
Low Standby Current  
Efficient High Frequency Operation  
Enhanced System Performance with Common Switching Regulator  
Control ICs  
8
SO–8  
D SUFFIX  
CASE 751  
3x151  
ALYW  
8
1
1
x
A
= 3 or 4  
= Assembly Location  
WL, L = Wafer Lot  
YY, Y = Year  
WW, W = Work Week  
PIN CONNECTIONS  
Pin Out Equivalent to DS0026 and MMH0026  
N.C.  
1
2
3
4
8
7
6
5
N.C.  
Drive Output A  
Logic Input A  
Gnd  
Representative Block Diagram  
V
CC  
V
CC  
6
Logic Input B  
Drive Output B  
+
+
+
+
(Top View)  
5.7V  
+
Drive Output A  
7
Logic Input A  
2
ORDERING INFORMATION  
Device  
Package  
SO–8  
Shipping  
MC34151D  
98 Units/Rail  
2500 Tape & Reel  
50 Units/Rail  
+
MC34151DR2  
MC34151P  
SO–8  
+
PDIP–8  
SO–8  
Drive Output B  
5
Logic Input B  
4
MC33151D  
98 Units/Rail  
MC33151DR2  
MC33151P  
SO–8  
2500 Tape & Reel  
50 Units/Rail  
PDIP–8  
SO–8  
MC33151VDR2  
2500 Units/Rail  
3
Gnd  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
April, 2000 – Rev. 1  
MC34151/D  

MC34151DR2 替代型号

型号 品牌 替代类型 描述 数据表
MC33152DR2G ONSEMI

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MC34151DR2G ONSEMI

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