Datasheet > MC33GD3100EK

MC33GD3100EK

更新时间： 2024-11-07 15:18:59

品牌	Logo	应用领域
恩智浦 - NXP		双极性晶体管
页数	文件大小	规格书
21页	474K
描述
EV Inverter Control; IGBT & SiC GDIC

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MC33GD3100EK 数据手册

MC33GD3100

Advanced IGBT/SiC gate driver

Rev. 10.0 — 29 September 2023

Product short data sheet

1 General description

The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated

Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low

dynamic saturation voltage and rail-to-rail gate voltage control.

Current and temperature sense minimizes IGBT stress during faults. Accurate and configurable undervoltage

lockout (UVLO) provides protection while ensuring sufficient gate drive voltage headroom.

The MC33GD3100 autonomously manages severe faults and reports faults and status via INTB pin and

a SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs. Self test, control

and protection functions are included for design of high reliability systems (ASIL C/D). It meets the stringent

requirements of automotive applications and is fully AEC-Q100 grade 1 qualified.

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型号	品牌	获取价格	描述	数据表
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MC33HB2001	NXP	获取价格	10 A H-bridge, SPI programmable brushed DC motor driver
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