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MC33170DTB PDF预览

MC33170DTB

更新时间: 2024-11-15 22:54:59
品牌 Logo 应用领域
安森美 - ONSEMI 电信集成电路电信电路射频放大器光电二极管蜂窝
页数 文件大小 规格书
16页 235K
描述
RF Amplifier Companion Chip for Dual-Band Cellular Subscriber Terminal

MC33170DTB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP,
针数:14Reach Compliance Code:unknown
HTS代码:8542.39.00.01风险等级:5.62
Is Samacsys:NJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:5 mm
功能数量:1端子数量:14
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
认证状态:Not Qualified座面最大高度:1.2 mm
标称供电电压:3.6 V表面贴装:YES
电信集成电路类型:TELECOM CIRCUIT温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:4.4 mmBase Number Matches:1

MC33170DTB 数据手册

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MC33170  
RF Amplifier Companion Chip  
for Dual-Band Cellular  
Subscriber Terminal  
The MC33170 is a complete solution for drain modulated  
dual–band GSM 900MHz and DCS–1800MHz Power Amplifiers.  
Thanks to its internal decoder, the MC33170 drastically simplifies the  
interface between the PAs and the baseband logic section, providing  
an immediate gain in part count but also in occupied copper area. The  
device is also ready for 1V platforms since it accepts logic high control  
signals down to 900mV@25°C.  
http://onsemi.com  
14  
1
A priority management system ensures the negative is present  
before authorizing the power modulation, giving the necessary  
ruggedness to the final design. This function can easily be disabled for  
PAs not requiring a negative bias.  
TSSOP–14  
DTB SUFFIX  
CASE 948G  
The device is able to directly drive an external P or N–channel with  
the possibility to linearize the overall response via the internal  
high–performance control amplifier and easily implement system  
gain.  
Finally, an LDO delivers a stable voltage, usable for external biasing  
purposes.  
PIN CONNECTIONS  
Common Enable  
1
2
3
4
5
6
7
14  
13  
12  
11  
Band Selection  
Tx Enable  
GSM-900  
DCS-1800  
PA Start-up  
Gnd  
Negative  
Regulator  
Out  
V
boost  
10 INV  
1V platform compatible: ON voltage = 900mV, OFF voltage =  
300mV max  
NINV  
LDO  
9
8
V
bat  
Priority management system prevents power modulation before  
negative bias establishes  
(Top View)  
High performance 4.5MHz gain–bandwidth product operational  
amplifier  
ORDERING INFORMATION  
Drives N or P–channel MOSFET  
2.5V low–noise LDO  
Idle mode input for very low power consumption (standby mode)  
Device  
MC33170DTB  
Package  
Shipping  
96 Units / Rail  
TSSOP–14  
MC33170DTBR2 TSSOP–14 2500 / Tape & Reel  
NINV  
V
V
bat  
(5.5 V Max)  
7
boost  
9
11  
Shutdown  
V
bat  
Low Dropout  
2.5 V  
2.5 V  
Shutdown  
2.5 V  
LDO  
Output  
8
+
-
Common  
Enable  
14  
T
X
Clip  
to –5 V  
700 mA  
Peak  
50 mA  
BG  
BD  
BG  
Enable  
Open–Collector  
Decoder  
2
1
1 mA  
Continuous  
NEGOK?  
Band  
Selection  
Continuous  
3
4
5
13  
10  
6
12  
GSM–900  
DCS–1800  
PA Start–Up  
Negative INV  
Regulator  
Out  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 1  
MC33170/D  

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OP-AMP, 6500uV OFFSET-MAX, 1.8MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8