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MC33171DR2G

更新时间： 2025-07-29 11:48:39
品牌 Logo 应用领域
安森美 - ONSEMI 运算放大器放大器电路光电二极管PC
页数 文件大小 规格书
16页 228K
描述
Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers

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中文翻译

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MC33171DR2G 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOIC
包装说明：LEAD FREE, SOP-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：1 week
风险等级：0.59Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：411636
Samacsys Pin Count：8Samacsys Part Category：Integrated Circuit
Samacsys Package Category：Small Outline PackagesSamacsys Footprint Name：MC33171DR2G
Samacsys Released Date：2019-08-11 16:38:32Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.2 µA25C 时的最大偏置电流 (IIB)：0.1 µA
标称共模抑制比：90 dB频率补偿：YES
最大输入失调电压：6500 µVJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
低-失调：NO微功率：YES
湿度敏感等级：1负供电电压上限：-22 V
标称负供电电压 (Vsup)：-15 V功能数量：1
端子数量：8最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
包装方法：TAPE AND REEL峰值回流温度（摄氏度）：260
电源：5/+-15 V认证状态：Not Qualified
座面最大高度：1.75 mm最小摆率：1.6 V/us
标称压摆率：2.1 V/us子类别：Operational Amplifier
最大压摆率：0.3 mA供电电压上限：22 V
标称供电电压 (Vsup)：15 V表面贴装：YES
技术：BIPOLAR温度等级：INDUSTRIAL
端子面层：Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40标称均一增益带宽：1800 kHz
最小电压增益：25000宽度：3.9 mm
Base Number Matches：1

MC33171DR2G 数据手册

 浏览型号MC33171DR2G的Datasheet PDF文件第2页浏览型号MC33171DR2G的Datasheet PDF文件第3页浏览型号MC33171DR2G的Datasheet PDF文件第4页浏览型号MC33171DR2G的Datasheet PDF文件第5页浏览型号MC33171DR2G的Datasheet PDF文件第6页浏览型号MC33171DR2G的Datasheet PDF文件第7页 
MC33171, MC33172,  
MC33174, NCV33172  
Single Supply 3.0 V to 44 V,  
Low Power Operational  
Amplifiers  
http://onsemi.com  
Quality bipolar fabrication with innovative design concepts are  
employed for the MC33171/72/74 series of monolithic operational  
amplifiers. These devices operate at 180 mA per amplifier and offer 1.8  
MHz of gain bandwidth product and 2.1 V/ms slew rate without the use  
of JFET device technology. Although this series can be operated from  
split supplies, it is particularly suited for single supply operation, since  
PDIP−8  
P SUFFIX  
CASE 626  
8
1
the common mode input voltage includes ground potential (V ).  
EE  
With a Darlington input stage, these devices exhibit high input  
resistance, low input offset voltage and high gain. The all NPN output  
stage, characterized by no deadband crossover distortion and large  
output voltage swing, provides high capacitance drive capability,  
excellent phase and gain margins, low open loop high frequency  
output impedance and symmetrical source/sink AC frequency  
response.  
SO−8  
D, VD SUFFIX  
CASE 751  
8
1
The MC33171/72/74 are specified over the industrial/automotive  
temperature ranges. The complete series of single, dual and quad  
operational amplifiers are available in plastic as well as the surface  
mount packages.  
PDIP−14  
P, VP SUFFIX  
CASE 646  
14  
1
Features  
SO−14  
D, VD SUFFIX  
CASE 751A  
14  
• Low Supply Current: 180 mA (Per Amplifier)  
• Wide Supply Operating Range: 3.0 V to 44 V or ±1.5 V to ±22 V  
1
• Wide Input Common Mode Range, Including Ground (V  
• Wide Bandwidth: 1.8 MHz  
• High Slew Rate: 2.1 V/ms  
)
EE  
TSSOP−14  
DTB SUFFIX  
CASE 948G  
14  
1
• Low Input Offset Voltage: 2.0 mV  
• Large Output Voltage Swing: −14.2 V to +14.2 V  
(with ±15 V Supplies)  
• Large Capacitance Drive Capability: 0 pF to 500 pF  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 9 of this data sheet.  
• Low Total Harmonic Distortion: 0.03%  
• Excellent Phase Margin: 60°  
• Excellent Gain Margin: 15 dB  
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 10 of this data sheet.  
• Output Short Circuit Protection  
• ESD Diodes Provide Input Protection for Dual and Quad  
• Pb−Free Packages are Available  
• NCV Prefix for Automotive and Other Applications Requiring Site  
and Control Changes  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 − Rev. 9  
MC33171/D  
1234567...16

中文翻译

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MC33171DR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC33171D ONSEMI

完全替代

 Low Power, Single Supply Operational Amplifiers
MC33171DG ONSEMI

类似代替

 Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers
MC33171DT STMICROELECTRONICS

功能相似

 Low consumption versus speed

与MC33171DR2G相关器件

型号 品牌 获取价格 描述 数据表
MC33171DT STMICROELECTRONICS

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 		Low consumption versus speed
MC33171N STMICROELECTRONICS

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 		LOW POWER SINGLE BIPOLAR OPERATIONAL AMPLIFIERS
MC33171P ONSEMI

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 		Low Power, Single Supply Operational Amplifiers
MC33171P MOTOROLA

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 		Low Power, Single Supply Operational Amplifiers
MC33171PG ONSEMI

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 		Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers
MC33171_06 ONSEMI

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 		Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers
MC33172 STMICROELECTRONICS

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 		LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS
MC33172 MOTOROLA

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 		Amplifiers and Comparators
MC33172 ONSEMI

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 		Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers
MC33172-MC35172 STMICROELECTRONICS

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 		LOW POWER DUAL BIPOLAR OPERATIONAL AMPLIFIERS

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