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MC14556BCP PDF预览

MC14556BCP

更新时间: 2024-01-06 09:55:07
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
6页 846K
描述
OTHER DECODER/DRIVER

MC14556BCP 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP16,.3
针数:16Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.33系列:4000/14000/40000
输入调节:STANDARDJESD-30 代码:R-PDIP-T16
JESD-609代码:e0长度:19.175 mm
负载电容(CL):50 pF逻辑集成电路类型:OTHER DECODER/DRIVER
最大I(ol):0.00064 A功能数量:2
端子数量:16最高工作温度:125 °C
最低工作温度:-55 °C输出极性:INVERTED
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP16,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):235
电源:5/15 VProp。Delay @ Nom-Sup:440 ns
传播延迟(tpd):440 ns认证状态:Not Qualified
座面最大高度:4.44 mm子类别:Decoder/Drivers
最大供电电压 (Vsup):18 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

MC14556BCP 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
The MC14555B and MC14556B are constructed with complementary  
MOS (CMOS) enhancement mode devices. Each Decoder/Demultiplexer  
has two select inputs (A and B), an active low Enable input (E), and four  
mutually exclusive outputs (Q0, Q1, Q2, Q3). The MC14555B has the  
selected output go to the “high” state, and the MC14556B has the selected  
output go to the “low” state. Expanded decoding such as binary–to–hexade-  
cimal (1–of–16), etc., can be achieved by using other MC14555B or  
MC14556B devices.  
L SUFFIX  
CERAMIC  
CASE 620  
P SUFFIX  
PLASTIC  
CASE 648  
Applications include code conversion, address decoding, memory selec-  
tion control, and demultiplexing (using the Enable input as a data input) in  
digital data transmission systems.  
D SUFFIX  
SOIC  
CASE 751B  
Diode Protection on All Inputs  
Active High or Active Low Outputs  
Expandable  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
All Outputs Buffered  
Capable of Driving Two Low–Power TTL Loads or One Low–Power  
Schottky TTL Load Over the Rated Temperature Range  
ORDERING INFORMATION  
MC14XXXBCP  
MC14XXXBCL  
MC14XXXBD  
Plastic  
Ceramic  
SOIC  
T
A
= – 55° to 125°C for all packages.  
MAXIMUM RATINGS* (Voltages Referenced to V  
)
SS  
TRUTH TABLE  
Symbol  
Parameter  
DC Supply Voltage  
Value  
Unit  
V
DD  
– 0.5 to + 18.0  
V
Inputs  
Outputs  
MC14555B MC14556B  
Q3 Q2 Q1 Q0 Q3 Q2 Q1 Q0  
V , V  
in out  
Input or Output Voltage (DC or Transient)  
– 0.5 to V  
DD  
+ 0.5  
V
Enable Select  
E
B
A
I , I  
in out  
Input or Output Current (DC or Transient),  
per Pin  
± 10  
mA  
0
0
0
0
0
0
1
1
0
1
0
1
0
0
0
1
0
0
1
0
0
1
0
0
1
0
0
0
1
1
1
0
1
1
0
1
1
0
1
1
0
1
1
1
P
D
Power Dissipation, per Package†  
Storage Temperature  
500  
– 65 to + 150  
260  
mW  
C
T
stg  
1
X
X
0
0
0
0
1
1
1
1
T
L
Lead Temperature (8–Second Soldering)  
C
X = Don’t Care  
* Maximum Ratings are those values beyond which damage to the device may occur.  
Temperature Derating:  
This device contains protection circuitry to  
guard against damage due to high static  
voltages or electric fields. However, pre-  
cautions must be taken to avoid applications of  
any voltage higher than maximum rated volt-  
ages to this high–impedance circuit. For proper  
“P and D/DW” Packages: – 7.0 mW/C From 65 C To 125 C Ceramic  
“L” Packages: – 12 mW/ C From 100 C To 125 C  
BLOCK DIAGRAM  
MC14555B  
Q0  
MC14556B  
operation, V and V  
should be constrained  
in out  
to the range V  
(V or V  
)
V
DD  
.
SS in out  
4
5
6
7
Q0  
4
5
6
7
2
3
1
2
3
1
A
B
E
A
B
E
Unused inputs must always be tied to an  
appropriate logic voltage level (e.g., either V  
Q1  
Q2  
Q3  
Q1  
Q2  
Q3  
SS  
or V ). Unused outputs must be left open.  
DD  
Q0  
Q1  
Q2  
Q3  
12  
11  
10  
9
12  
11  
10  
9
Q0  
Q1  
Q2  
Q3  
14  
13  
15  
14  
13  
15  
A
B
E
A
B
E
V
V
= PIN 16  
= PIN 8  
DD  
SS  
REV 3  
1/94  
Motorola, Inc. 1995  

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