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MC1413BDR2G PDF预览

MC1413BDR2G

更新时间: 2024-11-04 04:41:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
6页 65K
描述
High Voltage, High Current Darlington Transistor Arrays

MC1413BDR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:LEAD FREE, CASE 751B-05, SOIC-16针数:16
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:0.42其他特性:LOGIC LEVEL COMPATIBLE
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:COMPLEX最小直流电流增益 (hFE):1000
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
湿度敏感等级:1元件数量:7
端子数量:16最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MC1413BDR2G 数据手册

 浏览型号MC1413BDR2G的Datasheet PDF文件第2页浏览型号MC1413BDR2G的Datasheet PDF文件第3页浏览型号MC1413BDR2G的Datasheet PDF文件第4页浏览型号MC1413BDR2G的Datasheet PDF文件第5页浏览型号MC1413BDR2G的Datasheet PDF文件第6页 
MC1413, MC1413B,  
NCV1413B  
High Voltage, High Current  
Darlington Transistor Arrays  
The seven NPN Darlington connected transistors in these arrays are  
well suited for driving lamps, relays, or printer hammers in a variety of  
industrial and consumer applications. Their high breakdown voltage  
and internal suppression diodes insure freedom from problems  
associated with inductive loads. Peak inrush currents to 500 mA  
permit them to drive incandescent lamps.  
http://onsemi.com  
PDIP−16  
The MC1413, B with a 2.7 kW series input resistor is well suited for  
systems utilizing a 5.0 V TTL or CMOS Logic.  
P SUFFIX  
CASE 648  
16  
1
Features  
Pb−Free Packages are Available*  
SOIC−16  
D SUFFIX  
CASE 751B  
16  
1/7 MC1413, B  
1
2.7 k  
5.0 k  
Pin 9  
ORDERING INFORMATION  
3.0 k  
Device  
MC1413D  
Package  
Shipping  
SOIC−16  
48 Units/Rail  
MC1413DR2  
SOIC−16 2500 Tape & Reel  
Figure 1. Representative Schematic Diagram  
MC1413DR2G  
SOIC−16 2500 Tape & Reel  
(Pb−Free)  
MC1413P  
PDIP−16  
500 Units/Rail  
MC1413PG  
PDIP−16  
500 Units/Tubes  
(Pb−Free)  
1
2
3
4
5
6
16  
15  
14  
13  
12  
11  
10  
9
MC1413BD  
SOIC−16  
48 Units/Rail  
MC1413BDR2  
MC1413BDR2G  
SOIC−16 2500 Tape & Reel  
SOIC−16 2500 Tape & Reel  
(Pb−Free)  
MC1413BP  
PDIP−16  
500 Units/Rail  
NCV1413BDR2  
SOIC−16 2500 Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
7
8
DEVICE MARKING INFORMATION  
See general marking information in the device marking  
section on page 4 of this data sheet.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
(Top View)  
Figure 2. PIN CONNECTIONS  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
April, 2004 − Rev. 6  
MC1413/D  

MC1413BDR2G 替代型号

型号 品牌 替代类型 描述 数据表
MC1413DR2G ONSEMI

完全替代

High Voltage, High Current Darlington Transistor Arrays
ULN2003D1013TR STMICROELECTRONICS

完全替代

Seven darlington array
ULQ2003ADR TI

完全替代

HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY

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