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MC-4R64FKE8S-840 PDF预览

MC-4R64FKE8S-840

更新时间: 2024-11-28 22:16:39
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器时钟
页数 文件大小 规格书
14页 124K
描述
Direct Rambus DRAM SO-RIMM Module

MC-4R64FKE8S-840 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DMA包装说明:DIMM, DIMM160,25
针数:160Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.32
风险等级:5.92Is Samacsys:N
访问模式:BLOCK ORIENTED PROTOCOL最长访问时间:40 ns
其他特性:SELF CONTAINED REFRESH最大时钟频率 (fCLK):800 MHz
I/O 类型:COMMONJESD-30 代码:R-XDMA-N160
内存密度:603979776 bit内存集成电路类型:RAMBUS DRAM MODULE
内存宽度:18湿度敏感等级:1
功能数量:1端口数量:1
端子数量:160字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
组织:32MX18输出特性:3-STATE
封装主体材料:UNSPECIFIED封装代码:DIMM
封装等效代码:DIMM160,25封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY峰值回流温度(摄氏度):225
电源:1.8/2.5,2.5 V认证状态:Not Qualified
自我刷新:YES子类别:DRAMs
最大供电电压 (Vsup):2.63 V最小供电电压 (Vsup):2.37 V
标称供电电压 (Vsup):2.5 V表面贴装:NO
技术:CMOS端子形式:NO LEAD
端子节距:0.635 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MC-4R64FKE8S-840 数据手册

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DATA SHEET  
Direct Rambus DRAM SO-RIMMTM Module  
MC-4R64FKE8S-840 (32Mwords × 18 bits)  
Description  
Features  
The Direct Rambus SO-RIMM module is a general-  
purpose high-performance memory module subsystem  
suitable for use in a broad range of applications  
including computer memory, mobile personal  
computers, networking systems, and other applications  
where high bandwidth and low latency are required.  
160 edge connector pads with 0.65mm pad spacing  
64MB Direct RDRAM storage  
Each RDRAM has 32 banks, for 64 banks total on  
module  
Gold plated contacts  
RDRAMs use Chip Scale Package (CSP)  
Serial Presence Detect support  
Operates from a 2.5V supply  
Powerdown self refresh modes  
MC-4R64FKE8S modules consists of two 288M Direct  
Rambus  
DRAM  
(Direct  
RDRAM)  
devices  
(µPD488588). These are extremely high-speed CMOS  
DRAMs organized as 16M words by 18 bits. The use  
of Rambus Signaling Level (RSL) technology permits  
800MHz transfer rates while using conventional system  
and board design technologies.  
Separate Row and Column buses for higher  
efficiency  
Direct RDRAM devices are capable of sustained data  
transfers at 1.25ns per two bytes (10ns per 16 bytes).  
The architecture of the Direct RDRAM enables the  
highest sustained bandwidth for multiple, simultaneous,  
randomly addressed memory transactions.  
The  
separate control and data buses with independent row  
and column control yield high bus efficiency. The  
Direct RDRAM's multi-bank architecture supports up to  
four simultaneous transactions per device.  
Document No. E0259N20 (Ver. 2.0)  
Date Published June 2002 (K) Japan  
URL: http://www.elpida.com  
Elpida Memory,Inc. 2002  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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MEMORY MODULE,DRAM,RAMBUS,48MX16,CMOS,DIMM,184PIN,PLASTIC