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MC-4216LFC721FH-A60 PDF预览

MC-4216LFC721FH-A60

更新时间: 2024-11-14 20:09:19
品牌 Logo 应用领域
日电电子 - NEC 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
32页 304K
描述
EDO DRAM Module, 16MX72, 60ns, CMOS, PDMA168, PLASTIC, DIMM-168

MC-4216LFC721FH-A60 技术参数

生命周期:Obsolete零件包装代码:DIMM
包装说明:,针数:168
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.84
访问模式:FAST PAGE WITH EDO最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHJESD-30 代码:R-PDMA-N168
内存密度:1207959552 bit内存集成电路类型:EDO DRAM MODULE
内存宽度:72功能数量:1
端口数量:1端子数量:168
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX72
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:NO LEAD端子位置:DUAL
Base Number Matches:1

MC-4216LFC721FH-A60 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-4216LFC721  
3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE  
UNBUFFERED TYPE, EDO  
Description  
The MC-4216LFC721 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM :  
PD4265405 are assembled.  
µ
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• Unbuffered type  
• EDO (Hyper page mode)  
• 16,777,216 words by 72 bits organization  
• Fast access and cycle time  
Family  
Access time  
(MAX.)  
50 ns  
R/W cycle time EDO (Hyper page mode)  
Power consumption (MAX.)  
(MIN.)  
84 ns  
cycle time (MIN.)  
20 ns  
Active  
8.42 W  
7.13 W  
Standby  
32.4 mW  
MC-4216LFC721-A50  
MC-4216LFC721-A60  
60 ns  
104 ns  
25 ns  
(CMOS level input)  
• Refresh cycle  
Family  
Refresh cycle  
4,096 cycles / 64 ms  
Refresh  
MC-4216LFC721-A50  
MC-4216LFC721-A60  
/RAS only refresh, Normal read / write, /CAS before /RAS refresh,  
Hidden refresh  
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)  
• Single +3.3 V ± 0.3 V power supply  
• Serial PD  
The information in this document is subject to change without notice.  
Document No. M11907EJ3V0DS00 (3rd edition)  
Date Published October 1997 NS  
Printed in Japan  
The mark shows major revised points.  
1996  
©

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