Datasheet > MC-22212361F9-E85X-CD5

MC-22212361F9-E85X-CD5

更新时间： 2024-01-23 04:09:32

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器内存集成电路
页数	文件大小	规格书
28页	385K
描述
MC-22212361F9-E85X-CD5

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MC-22212361F9-E85X-CD5 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

MC-22212361F9-E85X-CD5 数据手册

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MC-22212361-X

Bus Operations

Operation

Flash Memory

SRAM

Common

/RESET /CEf /WP(ACC) /CE1^SCE2^S/LB /UB /OE /WE I/O0 to I/O7 I/O8toI/O15

Full Standby

High-Z

Output Disable

Flash Memory

Word Read ^{Note 1}

Word Write

High-Z

Note 2

Data Out

Data In

High-Z or

Data In/Out Data In/Out

High-Z or

Temporary Sector Group Unprotect

V^ID

Note 2

Automatic Sleep Mode

Data Out

High-Z or

Data In/Out Data In/Out

High-Z or High-Z or

Data In/Out Data In/Out

Data Out

High-Z or

Boot Block Sector Protect

Accelerated Mode

V^ACC

Note 2

Hardware Reset

SRAM

High-Z

Word Read

Note 3

Data Out

High-Z

Lower byte read

Upper byte read

Word Write

High-Z

Data In

Data Out

Data In

High-Z

Lower byte read

Upper byte read

High-Z

Data In

Caution Other operations except for indicated in this table are inhibited.

Notes 1. When /OE = V^IL, V^ILcan be applied to /WE. When /OE = V^IH, a write operation is started. When /WE = V^IL

and /OE = V^IL, a write operation is started.

2. SRAM should be Standby.

3. Flash Memory should be Standby or Hardware reset.

Remarks 1. × : V^IHor V^IL, H : V^IH, L : V^IL, V^ID: 9.0 to 11.0 V, V^ACC: 8.5 to 9.5 V

2. Sector group protection and read the product ID are using a command.

3. If an address is held longer than the minimum read cycle time (t^RC) in the flash memory read mode, the

automatic sleep mode is set.

Preliminary Data Sheet M15855EJ3V0DS

1 2 3 456 7 8...28

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