Datasheet > MC-222243AF9-B85X-BT3

MC-222243AF9-B85X-BT3

更新时间： 2024-02-14 05:22:18

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器内存集成电路
页数	文件大小	规格书
40页	269K
描述
IC,MIXED MEMORY,FLASH+SRAM,HYBRID,BGA,77PIN,PLASTIC

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MC-222243AF9-B85X-BT3 技术参数

生命周期：	Obsolete	包装说明：	FBGA, BGA77,8X14,32
Reach Compliance Code：	unknown	风险等级：	5.84
最长访问时间：	85 ns	JESD-30 代码：	R-PBGA-B77
内存集成电路类型：	MEMORY CIRCUIT	混合内存类型：	FLASH+SRAM
端子数量：	77	最高工作温度：	85 °C
最低工作温度：	-25 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA77,8X14,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
电源：	3/3.3 V	认证状态：	Not Qualified
子类别：	Other Memory ICs	最大压摆率：	0.045 mA
表面贴装：	YES	技术：	HYBRID
温度等级：	OTHER	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
Base Number Matches：	1

MC-222243AF9-B85X-BT3 数据手册

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DATA SHEET

MOS INTEGRATED CIRCUIT

MC-222243A-X

MCP (MULTI-CHIP PACKAGE) FLASH MEMORY AND SRAM

32M-BIT FLASH MEMORY AND 4M-BIT SRAM

Description

The MC-222243A-X is a stacked type MCP (Multi-Chip Package) of 33,554,432 bits (BYTE mode : 4,194,304 words

by 8 bits, WORD mode : 2,097,152 words by 16 bits) flash memory and 4,194,304 bits (BYTE mode : 524,288 words

by 8 bits, WORD mode : 262,144 words by 16 bits) static RAM.

The MC-222243A-X is packaged in a 77-pin TAPE FBGA.

Features

General Features

• Fast access time : t^ACC= 85 ns (MAX.) (Flash Memory), t^AA= 70 ns (MAX.) (SRAM)

• Supply voltage : V^CCf / V^CCs = 2.7 to 3.6 V

• Wide operating temperature : T^A= −25 to +85°C

Flash Memory Features

• Two bank organization enabling simultaneous execution of erase / program and read

• Bank organization : 2 banks (8M bits + 24M bits)

• Memory organization : 4,194,304 words × 8 bits (BYTE mode)

2,097,152 words × 16 bits (WORD mode)

• Sector organization : 71 sectors (8K bytes / 4K words × 8 sectors, 64K bytes / 32K words × 63 sectors)

• Boot sector allocated to the highest address (sector)

• 3-state output

• Automatic program

• Program suspend / resume

• Unlock bypass program

• Automatic erase

• Chip erase

• Sector erase (sectors can be combined freely)

• Erase suspend / resume

• Program / Erase completion detection

• Detection through data polling and toggle bits

• Detection through RY (/BY) pin

• Sector group protection

• Any sector can be protected

• Any protected sector can be temporary unprotected

• Sectors can be used for boot application

• Hardware reset and standby using /RESET pin

• Automatic sleep mode

• Boot block sector protect by /WP (ACC) pin

• Conforms to common flash memory interface (CFI)

• Extra One Time Protect Sector provided

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M15029EJ4V0DS00 (4th edition)

Date Published July 2001 NS CP (K)

Printed in Japan

The mark ★ shows major revised points.

2000

12 3 4 5 6 7...40

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与MC-222243AF9-B85X-BT3相关器件

型号	品牌	描述	获取价格	数据表
MC-222244AF9-B85X-BT3	NEC	Memory Circuit, 2MX16, CMOS, PBGA77, 12 X 7 MM, FBGA-77	获取价格
MC-222254AF9-B85X-BT3	NEC	Memory Circuit, 2MX16, CMOS, PBGA77, 12 X 7 MM, FBGA-77	获取价格
MC-222262F9-B85X-BT3	NEC	Memory Circuit, 2MX16, CMOS, PBGA77, 12 X 7 MM, FBGA-77	获取价格
MC-222263F9-B85X-BT3	NEC	Memory Circuit, 2MX16, CMOS, PBGA77, 12 X 7 MM, FBGA-77	获取价格
MC-222264F9-B85X-BT3	NEC	Memory Circuit, 2MX16, CMOS, PBGA77, 12 X 7 MM, FBGA-77	获取价格
MC-222272F9-B85X-BT3	RENESAS	IC,MIXED MEMORY,FLASH+SRAM,HYBRID,BGA,77PIN,PLASTIC	获取价格

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