Datasheet > MBRT500200R

MBRT500200R

更新时间： 2024-11-06 01:06:19

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描述
Silicon Power Schottky Diode

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中文翻译

获取价格

数据手册

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MBRT500200R 数据手册

MBRT500150 thru MBRT500200R

V_RRM= 150 V - 200 V

I_F(AV)= 500 A

Silicon Power

Schottky Diode

Features

• High Surge Capability

• Types from 150 V to 200 V V_RRM

Three Tower Package

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Maximum ratings, at T_j= 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

MBRT500200(R)

Parameter

Symbol

MBRT500150(R)

Unit

V_RRM

V_RMS

V_DC

T_j

200

141

Repetitive peak reverse voltage

RMS reverse voltage

150

106

200

DC blocking voltage

150

-55 to 150

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

T_C= 125 °C

MBRT500200(R)

Parameter

Symbol

I_F(AV)

MBRT500150(R)

Unit

Average forward current (per

pkg)

500

3500

0.92

500

Peak forward surge current

(per leg)

I_FSM

t_p= 8.3 ms, half sine

3500

Maximum instantaneous forward

voltage (per leg)

V_F

I_R

I_FM= 250 A, T_j= 25 °C

0.88

T_j= 25 °C

T_j= 100 °C

T_j= 150 °C

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R_ΘJC

0.30

°C/W

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrt500150.pdf

12 3

中文翻译

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