Datasheet > MBRS20100CT-Y

MBRS20100CT-Y

更新时间： 2024-02-21 00:20:55

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	243K
描述
20A, 45V - 200V Dual Common Cathode Schottky Rectifiers

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中文翻译

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数据手册

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MBRS20100CT-Y 数据手册

MBRS2045CT-Y - MBRS20200CT-Y

Taiwan Semiconductor

CREAT BY ART

20A, 45V - 200V Dual Common Cathode Schottky Rectifiers

FEATURES

- Low power loss, high efficiency

- Ideal for automated placement

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

TO-263AB (D²PAK)

MECHANICAL DATA

Case: TO-263AB (D²PAK)

Molding compound, UL flammability classification rating 94V-0

Moisture sensitivity level: level 1, per J-STD-020

Packing code with suffix "G" means green compound (halogen-free)

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity: As marked

Weight: 1.37 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

MBRS

2045

CT-Y

MBRS

2060

CT-Y

MBRS

20100

CT-Y

MBRS

20150

CT-Y

MBRS

20200

CT-Y

PARAMETER

SYMBOL

Unit

MBRS

Marking code

2045CT 2060CT 20100CT 20150CT 20200CT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

V_F

150

Peak repetitive reverse surge current (Note 1)

0.5

Maximum instantaneous forward voltage (Note 2)

I_F=10A, T_J=25°C

I_F=10A, T_J=125°C

0.99

0.87

0.70

0.60

0.80

0.70

0.85

0.75

0.1

Maximum reverse current @ rated VR T_J=25°C

T_J=125°C

I_R

Voltage rate of change (Rated V_R)

Typical thermal resistance

10000

dV/dt

R_θJC

T_J

V/μs

°C/W

°C

1.5

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: tp = 2.0 μs, 1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

Document Number: DS_D1408041

Version: B15

12 3 4

中文翻译

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