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MBRF20U150CTA PDF预览

MBRF20U150CTA

更新时间: 2024-11-20 11:11:23
品牌 Logo 应用领域
KEC 二极管局域网快速恢复二极管
页数 文件大小 规格书
1页 40K
描述
SCHOTTKY BARRIER TYPE DIODE

MBRF20U150CTA 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220IS(1), 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
Is Samacsys:N应用:FAST RECOVERY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:180 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:150 V
最大反向恢复时间:0.035 µs表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

MBRF20U150CTA 数据手册

  
SEMICONDUCTOR  
MBRF20U150CTA  
SCHOTTKY BARRIER TYPE DIODE  
TECHNICAL DATA  
SWITCHING MODE POWER SUPPLY APPLICATION.  
CONVERTER & CHOPPER APPLICATION.  
C
A
FEATURES  
· Average Output Rectified Current  
: IO=20A.  
DIM MILLIMETERS  
E
_
10.16 0.2  
+
A
B
C
D
E
_
15.87 0.2  
+
· Repetitive Peak Reverse Voltage  
: VRRM=150V.  
_
2.54 0.2  
+
_
0.8 0.1  
+
_
+
3.18  
0.1  
· Fast Reverse Recovery Time : trr=35ns.  
_
3.3 0.1  
+
F
_
12.57 0.2  
+
G
H
J
L
M
_
0.5 0.1  
+
R
_
13.0 0.5  
+
_
K
L
3.23 0.1  
+
D
1.47 MAX  
1.47 MAX  
M
N
O
Q
R
N
N
H
_
2.54 0.2  
+
MAXIMUM RATING (Ta=25)  
_
6.68 0.2  
+
CHARACTERISTIC  
SYMBOL  
VRRM  
RATING  
150  
UNIT  
V
1. ANODE  
2. CATHODE  
3. ANODE  
_
4.7  
+
_
0.2  
2.76 0.2  
+
1
2
3
Repetitive Peak Reverse Voltage  
Average Output Rectified  
Current (Note)  
IO  
20  
A
A
Peak One Cycle Surge Forward  
Current (Non-Repetitive 60Hz)  
TO-220IS (1)  
IFSM  
180  
Tj  
Junction Temperature  
-40150  
-55150  
Tstg  
Storage Temperature Range  
Note : average forward current of centertap full wave connection.  
2
1
3
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VFM  
TEST CONDITION  
IFM=10A  
MIN.  
TYP.  
-
MAX.  
0.90  
UNIT  
Peak Forward Voltage  
(Note)  
-
-
V
Repetitive Peak  
Reverse Current  
IRRM  
VRRM=Rated  
-
50  
(Note)  
(Note)  
trr  
Reverse Recovery Time  
Thermal Resistance  
IF=1.0A, di/dt=-30A/㎲  
-
-
-
-
35  
ns  
Rth(j-c)  
(Note)  
Juction to Case  
3.5  
/W  
Note : A value of one cell  
2010. 9. 28  
Revision No : 0  
1/1  

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