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MBRF2050C PDF预览

MBRF2050C

更新时间: 2024-11-03 01:01:47
品牌 Logo 应用领域
统懋 - MOSPEC /
页数 文件大小 规格书
2页 146K
描述
Full Plastic Dual Schottky Barrier Power Rectifiers

MBRF2050C 数据手册

 浏览型号MBRF2050C的Datasheet PDF文件第2页 
MOSPEC  
MBRF2030C Thru MBRF2060C  
Switchmode  
Full Plastic Dual Schottky Barrier Power Rectifiers  
SCHOTTKY BARRIER  
RECTIFIERS  
Using the Schottky Barrier principle with a Molybdenum barrier metal.  
These state-of-the-art geometry features epitaxial construction with oxide  
passivation and metal overlay contact. Ideally suited for low voltage, high  
frequency rectification, or as free wheeling and polarity protection diodes.  
20 AMPERES  
30-60 VOLTS  
Features  
Low Forward Voltage.  
Low Switching noise.  
High Current Capacity  
Guarantee Reverse Avalanche.  
Guard-Ring for Stress Protection.  
Low Power Loss & High efficiency.  
175Operating Junction Temperature  
Low Stored Charge Majority Carrier Conduction.  
Plastic Material used Carries Underwriters Laboratory  
ITO-220AB  
Flammability Classification 94V-O  
MAXIMUM RATINGS  
MBRF20  
Characteristic  
Symbol  
Unit  
30C 35C 40C 45C 50C 60C  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
30  
35  
25  
40  
28  
45  
32  
50  
35  
60  
42  
V
RMS Reverse Voltage  
VR(RMS) 21  
IF(AV)  
V
A
A
MILLIMETERS  
DIM  
Average Rectifier Forward Current (per diode)  
Total Device (Rated VR), TC=100℃  
10  
20  
MIN  
MAX  
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
14.90  
13.35  
10.00  
6.55  
2.65  
1.55  
1.15  
0.55  
2.50  
3.00  
1.10  
0.55  
4.40  
1.15  
3.35  
2.65  
3.15  
3.60  
15.15  
13.55  
10.10  
6.65  
2.75  
1.65  
1.25  
0.65  
2.60  
3.20  
1.20  
0.65  
4.60  
1.25  
3.45  
2.75  
3.25  
3.80  
Peak Repetitive Forward Current  
(Rate VR, Square Wave, 20kHz)  
IFM  
20  
Non-Repetitive Peak Surge Current  
(Surge applied at rate load conditions  
halfware, single phase, 60Hz)  
IFSM  
150  
A
Operating and Storage Junction  
Temperature Range  
TJ , Tstg  
-65 to +175  
THERMAL RESISTANCES  
Typical Thermal Resistance junction to  
case (per diode)  
/w  
Rθ j-c  
3.2  
ELECTRIAL CHARACTERISTICS  
MBRF20  
Characteristic  
Symbol  
Unit  
30C 35C 40C 45C 50C 60C  
Maximum Instantaneous Forward Voltage  
( IF =10 Amp TC = 25) (per diode)  
( IF =10 Amp TC = 125)  
VF  
0.75  
0.66  
0.80  
0.72  
V
Maximum Instantaneous Reverse Current  
( Rated DC Voltage, TC = 25)  
( Rated DC Voltage, TC = 125)  
IR  
0.01  
20  
mA  

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