MOSPEC
MBRF2030C Thru MBRF2060C
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
SCHOTTKY BARRIER
RECTIFIERS
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
20 AMPERES
30-60 VOLTS
Features
*Low Forward Voltage.
*Low Switching noise.
*High Current Capacity
*Guarantee Reverse Avalanche.
*Guard-Ring for Stress Protection.
*Low Power Loss & High efficiency.
*175℃ Operating Junction Temperature
*Low Stored Charge Majority Carrier Conduction.
*Plastic Material used Carries Underwriters Laboratory
ITO-220AB
Flammability Classification 94V-O
MAXIMUM RATINGS
MBRF20
Characteristic
Symbol
Unit
30C 35C 40C 45C 50C 60C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
25
40
28
45
32
50
35
60
42
V
RMS Reverse Voltage
VR(RMS) 21
IF(AV)
V
A
A
MILLIMETERS
DIM
Average Rectifier Forward Current (per diode)
Total Device (Rated VR), TC=100℃
10
20
MIN
MAX
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
14.90
13.35
10.00
6.55
2.65
1.55
1.15
0.55
2.50
3.00
1.10
0.55
4.40
1.15
3.35
2.65
3.15
3.60
15.15
13.55
10.10
6.65
2.75
1.65
1.25
0.65
2.60
3.20
1.20
0.65
4.60
1.25
3.45
2.75
3.25
3.80
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
20
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
IFSM
150
A
Operating and Storage Junction
Temperature Range
℃
TJ , Tstg
-65 to +175
THERMAL RESISTANCES
Typical Thermal Resistance junction to
case (per diode)
℃/w
Rθ j-c
3.2
ELECTRIAL CHARACTERISTICS
MBRF20
Characteristic
Symbol
Unit
30C 35C 40C 45C 50C 60C
Maximum Instantaneous Forward Voltage
( IF =10 Amp TC = 25℃) (per diode)
( IF =10 Amp TC = 125℃)
VF
0.75
0.66
0.80
0.72
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
0.01
20
mA