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MBRF2060CT PDF预览

MBRF2060CT

更新时间: 2024-11-18 12:10:19
品牌 Logo 应用领域
科盛美 - KERSEMI 二极管局域网
页数 文件大小 规格书
2页 921K
描述
Plastic material used carries Underwriters Laboratory Classifications 94V-0

MBRF2060CT 数据手册

 浏览型号MBRF2060CT的Datasheet PDF文件第2页 
MBRF2035CT - MBRF20150CT  
Features  
Plastic material used carries Underwriters Laboratory  
Classifications 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High current capability, low forward voltage drop  
High surge capability  
For use in low voltage, high frequency inverters, free  
wheeling, and polarity protection applications  
Guardring for overvoltage protection  
High temperature soldering guaranteed:  
o
260 C/10 seconds,0.25”(6.35mm)from case  
Mechanical Data  
Cases: ITO-220AB molded plastic  
Terminals: Pure tin plated, lead free. solderable per  
MIL-STD-750, Method 2026  
Polarity: As marked  
Mounting position: Any  
Dimensions in inches and (millimeters)  
Mounting torque: 5 in. - lbs. max  
Weight: 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
MBRF MBRF MBRF MBRF MBRF MBRF MBRF  
Symbol  
Units  
Type Number  
2035 2045 2050 2060 2090 20100 20150  
CT  
35  
24  
35  
CT  
45  
31  
45  
CT  
50  
35  
50  
CT  
60  
42  
60  
20  
CT  
90  
63  
90  
CT  
100 150  
70 105  
CT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
V
V
V
Maximum DC Blocking Voltage  
100 150  
o
Maximum Average Forward Rectified Current at T =135 C  
C
Total device  
Per Leg  
I(AV)  
IFRM  
A
A
10  
20  
Peak Repetitive Forward Current Per leg (Rated V , Square  
R
o
Wave, 20KHz) at Tc=135 C  
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave  
Superimposed on Rated Load (JEDEC method )  
Peak Repetitive Reverse Surge Current (Note 1)  
IFSM  
IRRM  
150  
A
A
1.0  
0.5  
Maximum Instantaneous Forward Voltage at (Note 2)  
o
0.95  
0.85  
1.05  
0.95  
I =10A, Tc=25 C  
F
-
0.80  
0.70  
0.95  
0.85  
0.85  
0.75  
0.95  
0.85  
o
I =10A, Tc=125 C  
VF  
0.57  
0.84  
0.72  
V
F
o
I =20A, Tc=25 C  
F
o
I =20A, Tc=125 C  
F
o
Maximum Instantaneous Reverse Current @ Tc=25 C  
0.1  
0.1  
15  
o
IR  
mA  
at Rated DC Blocking Voltage  
@ Tc=125 C  
10  
5.0  
Voltage Rate of Change, (Rated V )  
R
dV/dt  
10,000  
V/uS  
Typical Junction Capacitance  
Cj  
400  
310  
pF  
RMS Isolation Voltage (MBRF Type Only) from Terminals to  
4500 (Note 4)  
3500 (Note 5)  
1500 (Note 6)  
Heatsink with t=1.0 Second, RH 30%  
VISO  
V
o
Typical Thermal Resistance Per Leg (Note 3)  
R
θJC  
1.5  
3.5  
C/W  
o
Operating Junction Temperature Range  
Storage Temperature Range  
TJ  
-65 to +150  
-65 to +175  
C
o
C
T
STG  
Notes:  
1. 2.0us Pulse Width, f=1.0 KHz  
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle  
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate  
4. Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset.  
5. Clip Mounting (on case), where leads do overlap heatsink.  
6. Screw Mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19”)  
www.kersemi.com  

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