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MBRD630CT-T3-LF PDF预览

MBRD630CT-T3-LF

更新时间： 2024-11-24 14:53:11
品牌 Logo 应用领域
WTE 功效瞄准线二极管
页数 文件大小 规格书
4页 43K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 3A, 30V V(RRM), Silicon, TO-252, DPAK-3/2

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MBRD630CT-T3-LF 数据手册

 浏览型号MBRD630CT-T3-LF的Datasheet PDF文件第2页浏览型号MBRD630CT-T3-LF的Datasheet PDF文件第3页浏览型号MBRD630CT-T3-LF的Datasheet PDF文件第4页 
®
MBRD620CT – MBRD6100CT  
6.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
A
B
C
J
Guard Ring Die Construction for  
Transient Protection  
D
High Surge Current Capability  
Low Power Loss, High Efficiency  
Ideally Suited for Automatic Assembly  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
E
PIN 1  
2
3
K
G
H
L
P
P
DPAK/TO-252  
Min  
Mechanical Data  
Dim  
A
B
C
D
E
Max  
6.65  
5.55  
2.40  
1.25  
6.08  
3.00  
0.90  
0.55  
1.25  
0.55  
6.05  
Case: DPAK/TO-252, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
5.05  
PIN 1  
PIN 3  
2.25  
Case, PIN 2  
1.05  
Polarity: See Diagram  
Weight: 0.3 grams (approx.)  
Mounting Position: Any  
Marking: Device Code, See Page 3  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
5.48  
G
H
J
2.55  
0.55  
0.49  
K
L
0.95  
0.49  
P
2.30 Typical  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
MBRD MBRD MBRD MBRD MBRD MBRD MBRD  
Characteristic  
Symbol  
Unit  
620CT 630CT 640CT 650CT 660CT 680CT 6100CT  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
20  
14  
30  
21  
40  
28  
50  
60  
42  
80  
56  
100  
70  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
35  
V
A
Average Rectified Output Current  
@TC = 125°C  
Total Device  
Per Diode  
6.0  
3.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
75  
A
Forward Voltage per diode  
@IF = 3.0A  
VFM  
IRM  
CJ  
0.55  
300  
0.75  
200  
0.85  
150  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.2  
15  
Typical Junction Capacitance (Note 1)  
Thermal Resistance, Junction to Ambient (Note 2)  
Thermal Resistance, Junction to Case (Note 2)  
RθJA  
RθJC  
80  
6.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.  
2. Mounted on FR-4 PC board with minimum recommended pad layout per diode.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1
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