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MBRB30H60CTHE3_B/I PDF预览

MBRB30H60CTHE3_B/I

更新时间： 2024-09-27 19:39:47
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线测试二极管
页数 文件大小 规格书
5页 91K
描述
Rectifier Diode,

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MBRB30H60CTHE3_B/I 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-G2Reach Compliance Code：unknown
风险等级：5.68其他特性：FREE WHEELING DIODE, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.71 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
最大非重复峰值正向电流：150 A元件数量：2
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED参考标准：AEC-Q101
最大重复峰值反向电压：60 V最大反向电流：60 µA
反向测试电压：60 V表面贴装：YES
技术：SCHOTTKY端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MBRB30H60CTHE3_B/I 数据手册

 浏览型号MBRB30H60CTHE3_B/I的Datasheet PDF文件第2页浏览型号MBRB30H60CTHE3_B/I的Datasheet PDF文件第3页浏览型号MBRB30H60CTHE3_B/I的Datasheet PDF文件第4页浏览型号MBRB30H60CTHE3_B/I的Datasheet PDF文件第5页 
MBRB30HxxCT  
Vishay General Semiconductor  
www.vishay.com  
Dual Common Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Power pack  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
TO-263AB  
K
• Low leakage current  
• High forward surge capability  
• High frequency operation  
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
MBRB30HxxCT  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3_A  
PIN 1  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 2  
HEATSINK  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
2 x 15 A  
45 V, 60 V  
150 A  
MECHANICAL DATA  
Case: TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
VF  
IR  
0.56 V, 0.59 V  
80 μA, 60 μA  
175 °C  
TJ max.  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Package  
TO-263AB  
Circuit configuration  
Common cathode  
Polarity: as marked  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBRB30H45CT  
MBRB30H60CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
45  
45  
45  
60  
60  
60  
V
V
V
total device  
per diode  
30  
15  
Maximum average forward rectified current (fig. 1)  
IF(AV)  
IFSM  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load per diode  
150  
Peak repetitive reverse surge current per diode at tp = 2 μs, 1 kHz  
Peak non-repetitive reverse energy (8/20 μs waveform)  
IRRM  
ERSM  
EAS  
1.0  
25  
0.5  
20  
A
mJ  
mJ  
Non-repetitive avalanche energy per diode at 25 °C, IAS = 4 A, L = 10 mH  
80  
25  
Electrostatic discharge capacitor voltage human body model: C = 100  
pF, R = 1.5 k  
VC  
kV  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Revision: 26-Sep-2018  
Document Number: 87539  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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