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MBRB30H100CT-E3/81 PDF预览

MBRB30H100CT-E3/81

更新时间: 2024-11-24 02:58:11
品牌 Logo 应用领域
威世 - VISHAY 整流二极管瞄准线高压功效
页数 文件大小 规格书
5页 169K
描述
Dual Common-Cathode High-Voltage Schottky Rectifier

MBRB30H100CT-E3/81 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.41
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.67 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:275 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:15 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRB30H100CT-E3/81 数据手册

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New Product  
MBR30H90CT & MBR30H100CT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
MBR30H90CT  
MBR30H100CT  
1
MBRF30H90CT  
MBRF30H100CT  
• Meets MSL level 1, per J-STD-020C, LF maximum  
peak of 245 °C (for TO-263AB package)  
• Solder dip 260 °C, 40 s (for TO-220AB and  
ITO-220AB package)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
TO-263AB  
K
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching  
mode power supplies, freewheeling diodes, dc-to-dc  
converters or polarity protection application.  
MBRB30H90CT  
MBRB30H100CT  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
15 A x 2  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
90 V, 100 V  
275 A  
0.67 V  
IR  
5.0 µA  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR30H90CT MBR30H100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
90  
90  
90  
100  
100  
100  
V
V
V
total device  
per diode  
30  
15  
Maximum average forward rectified current (Fig. 1)  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load per diode  
IFSM  
275  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
1.0  
A
10000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Document Number: 88791  
Revision: 12-Nov-07  
www.vishay.com  
1

MBRB30H100CT-E3/81 替代型号

型号 品牌 替代类型 描述 数据表
MBRB30H100CTHE3/45 VISHAY

完全替代

Dual Common-Cathode High-Voltage Schottky Rectifier
MBRB30H100CTHE3/81 VISHAY

完全替代

Dual Common-Cathode High-Voltage Schottky Rectifier

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