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MBRB30H35CTHE3_A/I PDF预览

MBRB30H35CTHE3_A/I

更新时间： 2024-01-17 00:21:07
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线测试二极管
页数 文件大小 规格书
5页 146K
描述
Rectifier Diode,

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MBRB30H35CTHE3_A/I 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：R-PSSO-G2Reach Compliance Code：unknown
风险等级：5.75其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS
应用：EFFICIENCY外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.73 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
最大非重复峰值正向电流：150 A元件数量：2
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：15 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED参考标准：AEC-Q101
最大重复峰值反向电压：35 V最大反向电流：80 µA
反向测试电压：35 V表面贴装：YES
技术：SCHOTTKY端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MBRB30H35CTHE3_A/I 数据手册

 浏览型号MBRB30H35CTHE3_A/I的Datasheet PDF文件第2页浏览型号MBRB30H35CTHE3_A/I的Datasheet PDF文件第3页浏览型号MBRB30H35CTHE3_A/I的Datasheet PDF文件第4页浏览型号MBRB30H35CTHE3_A/I的Datasheet PDF文件第5页 
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode High Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• Low leakage current  
3
• High forward surge capability  
• High frequency operation  
3
2
2
1
1
MBR30H100CT  
MBRF30H100CT  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
TO-263AB  
K
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TYPICAL APPLICATIONS  
MBRB30H100CT  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters, and  
polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
15 A x 2  
100 V  
275 A  
0.67 V  
5.0 μA  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
IR  
TJ max.  
TO-220AB, ITO-220AB,  
TO-263AB  
Package  
Polarity: As marked  
Diode variations  
Dual common cathode  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBR30H100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
100  
100  
100  
30  
V
total device  
per diode  
Maximum average forward rectified current  
(fig.1)  
IF(AV)  
15  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
A
IFSM  
IRRM  
275  
1.0  
Peak repetitive reverse surge current per diode  
at tp = 2.0 μs, 1 kHz  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
Revision: 14-Jun-17  
Document Number: 88791  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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MBRB30H35CTHE3_A/I 替代型号

型号 品牌 替代类型 描述 数据表
MBRB30H35CTHE3/81 VISHAY

完全替代

 DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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