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MBRB2090CT-E3/4W PDF预览

MBRB2090CT-E3/4W

更新时间: 2024-11-25 14:53:11
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
5页 153K
描述
DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

MBRB2090CT-E3/4W 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:D2PAK
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.22
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.65 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大重复峰值反向电压:90 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

MBRB2090CT-E3/4W 数据手册

 浏览型号MBRB2090CT-E3/4W的Datasheet PDF文件第2页浏览型号MBRB2090CT-E3/4W的Datasheet PDF文件第3页浏览型号MBRB2090CT-E3/4W的Datasheet PDF文件第4页浏览型号MBRB2090CT-E3/4W的Datasheet PDF文件第5页 
MBR20xxxCT-E3, MBRF20xxxCT-E3, MBRB20xxxCT-E3  
www.vishay.com  
Vishay General Semiconductor  
Dual Common-Cathode High Voltage  
Trench MOS Barrier Schottky Rectifier  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-220AB  
ITO-220AB  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
3
3
2
2
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
MBR2090CT  
MBR20100CT  
PIN 1  
MBRF2090CT  
MBRF20100CT  
1
1
PIN 2  
CASE  
PIN 1  
PIN 2  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PIN 3  
PIN 3  
TO-263AB  
K
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters or polarity  
protection application.  
2
1
MBRB2090CT  
MBRB20100CT  
PIN 1  
MECHANICAL DATA  
K
Case: TO-220AB, ITO-220AB, TO-263AB  
PIN 2  
HEATSINK  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
PRIMARY CHARACTERISTICS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
IF(AV)  
2 x 10 A  
VRRM  
IFSM  
90 V to 100 V  
150 A  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
VF  
0.65 V  
Mounting Torque: 10 in-lbs maximum  
TJ max.  
150 °C  
TO-220AB, ITO-220AB,  
TO-263AB  
Package  
Diode variation  
Common cathode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
MBR2090CT MBR20100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
Maximum DC blocking voltage  
total device  
Maximum average forward rectified current at TC = 133 °C  
per diode  
20  
10  
IF(AV)  
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on  
rated load per diode  
IFSM  
EAS  
150  
130  
0.5  
A
mJ  
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode  
Peak repetitive reverse current at tp = 2 μs, 1 kHz,  
TJ = 38 °C 2 °C per diode  
IRRM  
Voltage rate of change (rated VR)  
dV/dt  
VAC  
10 000  
1500  
V/μs  
V
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +150  
°C  
Revision: 10-May-16  
Document Number: 89033  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

MBRB2090CT-E3/4W 替代型号

型号 品牌 替代类型 描述 数据表
NRVBB20100CTT4G ONSEMI

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