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MBRB2090CT-M3/4W PDF预览

MBRB2090CT-M3/4W

更新时间: 2024-11-25 20:07:51
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
4页 91K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 90V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2

MBRB2090CT-M3/4W 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3/2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.65其他特性:FREE WHEELING DIODE, LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.8 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:90 V最大反向电流:100 µA
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBRB2090CT-M3/4W 数据手册

 浏览型号MBRB2090CT-M3/4W的Datasheet PDF文件第2页浏览型号MBRB2090CT-M3/4W的Datasheet PDF文件第3页浏览型号MBRB2090CT-M3/4W的Datasheet PDF文件第4页 
MBRB2090CT-M3, MBRB20100CT-M3  
www.vishay.com  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
FEATURES  
TMBS®  
• Trench MOS Schottky technology  
TO-263AB  
• Lower power losses, high efficiency  
• Low forward voltage drop  
K
• High forward surge capability  
• High frequency operation  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C  
2
1
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MBRB2090CT  
MBRB20100CT  
PIN 1  
K
TYPICAL APPLICATIONS  
PIN 2  
HEATSINK  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters, or  
polarity protection application.  
PRIMARY CHARACTERISTICS  
Package  
TO-263AB  
2 x 10 A  
90 V, 100 V  
150 A  
MECHANICAL DATA  
IF(AV)  
Case: TO-263AB  
VRRM  
IFSM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS-compliant, and  
VF  
0.65 V  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Diode variation  
Common cathode  
M3 suffix meets JESD 201 class 1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
MBRB2090CT MBRB20100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
Maximum DC blocking voltage  
total device  
Maximum average forward rectified current at TC = 133 °C  
per diode  
20  
10  
IF(AV)  
IFSM  
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on  
rated load per diode  
150  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
MAX.  
0.80  
0.65  
0.75  
100  
UNIT  
IF = 10 A  
TC = 25 °C  
TC = 125 °C  
TC = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
Maximum instantaneous forward voltage  
IF = 10 A  
IF = 20 A  
VF  
V
per diode (1)  
μA  
Maximum reverse current per diode at  
working peak reverse voltage (2)  
IR  
6.0  
mA  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
Revision: 15-May-13  
Document Number: 87980  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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