Datasheet > MBRB2045CT-E3/31

MBRB2045CT-E3/31

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	146K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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MBRB2045CT-E3/31 数据手册

MBR(F,B)2035CT thru MBR(F,B)2060CT

Vishay General Semiconductor

Dual Common-Cathode Schottky Rectifier

FEATURES

TO-220AB

ITO-220AB

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020C, LF max peak

of 245 °C (for TO-263AB package)

MBR20xxCT

MBRF20xxCT

PIN 1

PIN 2

CASE

PIN 1

PIN 2

PIN 3

• Solder Dip 260 °C, 40 seconds (for TO-220AB &

ITO-220AB package)

PIN 3

TO-263AB

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, free-wheeling diodes,

dc-to-dc converters or polarity protection application.

MBRB20xxCT

PIN 1

PIN 2

HEATSINK

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: As marked

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

10 A x 2

35 V to 60 V

150 A

V_F

0.57 V, 0.70 V

150 °C

T_jmax

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL MBR2035CT MBR2045CT MBR2050CT MBR2060CT UNIT

Maximum repetitive peak reverse voltage

Working peak reverse voltage

V_RRM

V_RWM

V_DC

Maximum DC blocking voltage

Maximum average forward rectified Total device

I_F(AV)

I_FSM

I_RRM

current at T_C= 135 °C

per diode

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

150

Peak repetitive reverse surge current per diode at

t_p= 2 µs, 1 kHz

1.0

0.5

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

dv/dt

T_J

10000

V/µs

°C

- 65 to + 150

- 65 to + 175

T_STG

°C

Isolation voltage (ITO-220AB only)

From terminal to heatsink t = 1 minute

V_AC

1500

Document Number 88674

22-Aug-06

www.vishay.com

12 3 4 5

中文翻译

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与MBRB2045CT-E3/31相关器件

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MBRB2045CT-E3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
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MBRB2045CTG	THINKISEMI	获取价格	20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers
MBRB2045CT-G	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, GREEN, PLASTIC, D2PAK-3
MBRB2045CT-GT4	SENSITRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, Silicon, GREEN, PLASTIC, D2PAK-3
MBRB2045CTHE3	KERSEMI	获取价格	Guardring for overvoltage protection
MBRB2045CTHE3/45	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
MBRB2045CT-HE3/45	VISHAY	获取价格	DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB2045CTHE3/81	VISHAY	获取价格	Dual Common-Cathode Schottky Rectifier
MBRB2045CT-HE3/81	VISHAY	获取价格	DIODE 10 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

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