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MBRB2045CTG PDF预览

MBRB2045CTG

更新时间： 2024-02-07 22:40:35
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 1052K
描述
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers

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中文翻译

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MBRB2045CTG 数据手册

 浏览型号MBRB2045CTG的Datasheet PDF文件第2页 
MBRB2045CTG thru MBRB20200CTG  
MBRB2045CTG thru MBRB20200CTG  
Pb Free Plating Product  
20.0 Ampere Surface Mount Dual Common Cathode Schottky Barrier Rectifiers  
Unit : inch (mm)  
D2PAK/TO-263AB  
ThinkiSemi Planar Schottky Technology  
¬
¬
¬
¬
¬
¬
Good Soft Recovery Characteristics  
Ideally Suited for Automatic Assembly  
Low Forward Voltage  
Features  
High Surge Current Capability  
Low Leakage Current  
Freewheeling, Snubber, Clamp  
¬
Inversion Welder  
¬
PFC  
¬
Applications  
Plating Power Supply  
¬
Ultrasonic Cleaner and Welder  
¬
Case  
Case  
Case  
Case  
Converter & Chopper  
¬
¬
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CTG" Suffix "CTA"  
Positive  
UPS/LED SMPS/HID  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
MBRB  
2045  
CTG  
MBRB  
2060  
CTG  
MBRB  
20100  
CTG  
MBRB  
20150  
CTG  
MBRB  
20200  
CTG  
PARAMETER  
SYMBOL  
Unit  
MBRB  
MBRB  
MBRB  
MBRB  
MBRB  
Marking code  
2045CTG 2060CTG 20100CTG 20150CTG 20200CTG  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
45  
31  
45  
60  
42  
60  
100  
70  
150  
105  
150  
200  
140  
200  
V
V
V
A
Maximum DC blocking voltage  
100  
20  
Maximum average forward rectified current  
IF(AV)  
Peak repetitive forward current  
(Rated VR, Square wave, 20KHz)  
IFRM  
20  
A
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
IRRM  
VF  
150  
A
A
Peak repetitive reverse surge current (Note 1)  
0.5  
1
Maximum instantaneous forward voltage (Note 2)  
IF=10A, TJ=25°C  
IF=10A, TJ=125°C  
0.99  
0.87  
V
0.70  
0.60  
0.80  
0.70  
0.85  
0.75  
0.1  
Maximum reverse current @ rated VR TJ=25°C  
TJ=125°C  
IR  
mA  
5
2
15  
10  
Voltage rate of change (Rated VR)  
Typical thermal resistance  
10000  
dV/dt  
RθJC  
TJ  
V/μs  
°C/W  
°C  
1.5  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: tp = 2.0 μs, 1.0KHz  
Note 2: Pulse test with PW=300μs, 1% duty cycle  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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