MBR(F,B)16H35 thru MBR(F,B)16H60
Vishay General Semiconductor
Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-220AC
ITO-220AC
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
2
2
1
1
MBR16Hxx
PIN 1
MBRF16Hxx
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
PIN 1
CASE
PIN 2
PIN 2
• Solder dip 260 °C, 40 s (for TO-220AC and
ITO-220AC package)
TO-263AB
K
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
1
TYPICAL APPLICATIONS
MBRB16Hxx
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
PIN 1
K
PIN 2
HEATSINK
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
16 A
35 V to 60 V
150 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
VRRM
IFSM
VF
0.56 V, 0.62 V
100 µA
IR
TJ max.
175 °C
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL MBR16H35 MBR16H45 MBR16H50 MBR16H60 UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
V
Maximum DC blocking voltage
V
Max. average forward rectified current (Fig. 1)
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH
IF(AV)
EAS
16
80
A
mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz
Peak non-repetitive reverse energy (8/20 µs waveform)
IRRM
1.0
0.5
A
ERSM
20
25
mJ
Electrostatic discharge capacitor voltage human body model:
C = 100 pF, R = 1.5 kΩ
VC
kV
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
Document Number: 88784
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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