5秒后页面跳转
捷配首页

Datasheet > MBRB16H45HE3_B/I
MBRB16H45HE3_B/I PDF预览

MBRB16H45HE3_B/I

更新时间： 2024-10-02 15:40:55
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
4页 98K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2

阅读下载

中文翻译

获取价格

MBRB16H45HE3_B/I 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-G2Reach Compliance Code：unknown
Factory Lead Time：10 weeks风险等级：5.69
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.66 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：245
参考标准：AEC-Q101最大重复峰值反向电压：45 V
最大反向电流：100 µA表面贴装：YES
技术：SCHOTTKY端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MBRB16H45HE3_B/I 数据手册

 浏览型号MBRB16H45HE3_B/I的Datasheet PDF文件第2页浏览型号MBRB16H45HE3_B/I的Datasheet PDF文件第3页浏览型号MBRB16H45HE3_B/I的Datasheet PDF文件第4页 
MBRB16H35, MBRB16H45, MBRB16H60  
www.vishay.com  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Power pack  
D2PAK (TO-263AB)  
K
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• Low leakage current  
2
1
• High forward surge capability  
• High frequency operation  
MBRB16HXX  
PIN 1  
PIN 2  
K
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
HEATSINK  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3_A  
click logo to get started  
DESIGN SUPPORT TOOLS  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Models  
Available  
TYPICAL APPLICATIONS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
16 A  
VRRM  
35 V, 45 V, 60 V  
150 A  
MECHANICAL DATA  
IFSM  
Case: D2PAK (TO-263AB)  
VF  
IR  
0.56 V, 0.62 V  
100 μA  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
TJ max.  
175 °C  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Package  
D2PAK (TO-263AB)  
Circuit configuration  
Single  
Polarity: as marked  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBRB16H35  
MBRB16H45  
MBRB16H60  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
35  
35  
35  
45  
45  
45  
16  
60  
60  
60  
VRWM  
VDC  
V
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
IF(AV)  
A
Non-repetitive avalanche energy  
at 25 °C, IAS = 4 A, L = 10 mH  
EAS  
80  
mJ  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz  
Peak non-repetitive reverse energy (8/20 μs waveform)  
IRRM  
1.0  
1.0  
20  
0.5  
ERSM  
mJ  
kV  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 k  
VC  
25  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
Revision: 19-Sep-2018  
Document Number: 88784  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

中文翻译

下载PDF

与MBRB16H45HE3_B/I相关器件

型号 品牌 获取价格 描述 数据表
MBRB16H45HE3_B/P VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/
MBRB16H50 VISHAY

获取价格

 		Schottky Barrier Rectifier
MBRB16H50/31 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Element, 16A, 50V V(RRM),
MBRB16H50/31-E3 VISHAY

获取价格

 		DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode
MBRB16H50/45 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Element, 16A, 50V V(RRM),
MBRB16H50/81 VISHAY

获取价格

 		Rectifier Diode, Schottky, 1 Element, 16A, 50V V(RRM),
MBRB16H50/81-E3 VISHAY

获取价格

 		DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode
MBRB16H50-E3 VISHAY

获取价格

 		DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode
MBRB16H50-E3/31 VISHAY

获取价格

 		DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC PACKAGE-3, Rectifier Diode
MBRB16H50-E3/45 VISHAY

获取价格

 		DIODE 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

与MBRB16H45HE3_B/I相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证