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MBRB16H60-E3/45 PDF预览

MBRB16H60-E3/45

更新时间： 2024-10-02 15:40:55
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
4页 86K
描述
DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

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MBRB16H60-E3/45 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：D2PAK
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.27
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.62 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：150 A
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：16 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：60 V
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MBRB16H60-E3/45 数据手册

 浏览型号MBRB16H60-E3/45的Datasheet PDF文件第2页浏览型号MBRB16H60-E3/45的Datasheet PDF文件第3页浏览型号MBRB16H60-E3/45的Datasheet PDF文件第4页 
MBRB16H60  
Vishay General Semiconductor  
www.vishay.com  
Schottky Barrier Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Power pack  
TO-263AB  
• Guardring for overvoltage protection  
• Low power loss, high efficiency  
• Low forward voltage drop  
• Low leakage current  
K
2
1
• High forward surge capability  
• High frequency operation  
PIN 1  
PIN 2  
K
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
HEATSINK  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3_A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, and polarity protection application.  
IF(AV)  
16 A  
60 V  
VRRM  
IFSM  
150 A  
MECHANICAL DATA  
Case: TO-263AB  
VF  
IR  
0.62 V  
100 μA  
175 °C  
TO-263AB  
Single  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“_X” denotes revision code, e.g. A, B, ...)  
TJ max.  
Package  
Circuit configuration  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: as marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBRB16H60  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
60  
60  
60  
16  
V
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
IF(AV)  
A
Non-repetitive avalanche energy  
at 25 °C, IAS = 4 A, L = 10 mH  
EAS  
80  
mJ  
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load  
IFSM  
150  
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz  
Peak non-repetitive reverse energy (8/20 μs waveform)  
IRRM  
0.5  
20  
ERSM  
mJ  
kV  
Electrostatic discharge capacitor voltage  
Human body model: C = 100 pF, R = 1.5 kΩ  
VC  
25  
Voltage rate of change (rated VR)  
dV/dt  
TJ, TSTG  
VAC  
10 000  
-65 to +175  
1500  
V/μs  
°C  
Operating junction and storage temperature range  
Isolation voltage from terminal to heatsink t = 1 min  
V
Revision: 08-Jun-17  
Document Number: 88784  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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MBRB16H60-E3/45 替代型号

型号 品牌 替代类型 描述 数据表
MBRB16H60HE3/81 VISHAY

完全替代

 DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB16H60-E3/81 VISHAY

完全替代

 DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R

与MBRB16H60-E3/45相关器件

型号 品牌 获取价格 描述 数据表
MBRB16H60-E3/81 VISHAY

获取价格

 		DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB16H60HE3/45 VISHAY

获取价格

 		DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB16H60-HE3/45 VISHAY

获取价格

 		DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB16H60HE3/81 VISHAY

获取价格

 		DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB16H60-HE3/81 VISHAY

获取价格

 		DIODE 16 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
MBRB16H60HE3_A/I VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 60V V(RRM), Silicon, TO-263AB,
MBRB16H60HE3_A/P VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 60V V(RRM), Silicon, TO-263AB,
MBRB16H60HE3_B/I VISHAY

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 		暂无描述
MBRB16H60HE3_B/P VISHAY

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 		Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/
MBRB16HXX VISHAY

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 		Schottky Barrier Rectifiers

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