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MBRB16H45HE3_A/I PDF预览

MBRB16H45HE3_A/I

更新时间： 2024-10-02 20:04:11
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线二极管
页数 文件大小 规格书
5页 139K
描述
Rectifier Diode,

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MBRB16H45HE3_A/I 技术参数

生命周期：Obsolete包装说明：R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.68
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.66 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2最大非重复峰值正向电流：150 A
元件数量：2相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：16 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE参考标准：AEC-Q101
最大重复峰值反向电压：45 V最大反向电流：100 µA
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：SINGLE
Base Number Matches：1

MBRB16H45HE3_A/I 数据手册

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MBR(F,B)16H35 thru MBR(F,B)16H60  
Vishay General Semiconductor  
Schottky Barrier Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AC  
ITO-220AC  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• High frequency operation  
2
2
1
1
MBR16Hxx  
PIN 1  
MBRF16Hxx  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C (for TO-263AB package)  
PIN 1  
CASE  
PIN 2  
PIN 2  
• Solder dip 260 °C, 40 s (for TO-220AC and  
ITO-220AC package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
1
TYPICAL APPLICATIONS  
MBRB16Hxx  
For use in low voltage, high frequency rectifier of  
switching mode power supplies, freewheeling diodes,  
dc-to-dc converters or polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AC, ITO-220AC, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
PRIMARY CHARACTERISTICS  
IF(AV)  
16 A  
35 V to 60 V  
150 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
VRRM  
IFSM  
VF  
0.56 V, 0.62 V  
100 µA  
IR  
TJ max.  
175 °C  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL MBR16H35 MBR16H45 MBR16H50 MBR16H60 UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
Maximum DC blocking voltage  
V
Max. average forward rectified current (Fig. 1)  
Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH  
IF(AV)  
EAS  
16  
80  
A
mJ  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz  
Peak non-repetitive reverse energy (8/20 µs waveform)  
IRRM  
1.0  
0.5  
A
ERSM  
20  
25  
mJ  
Electrostatic discharge capacitor voltage human body model:  
C = 100 pF, R = 1.5 kΩ  
VC  
kV  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/µs  
Document Number: 88784  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
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