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MBR860MFST3G PDF预览

MBR860MFST3G

更新时间： 2024-09-24 01:12:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 67K
描述
SWITCHMODE Power Rectifiers

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中文翻译

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MBR860MFST3G 数据手册

 浏览型号MBR860MFST3G的Datasheet PDF文件第2页浏览型号MBR860MFST3G的Datasheet PDF文件第3页浏览型号MBR860MFST3G的Datasheet PDF文件第4页 
MBR860MFS, NRVB860MFS  
SWITCHMODE  
Power Rectifiers  
These state−of−the−art devices have the following features:  
Features  
• Low Power Loss / High Efficiency  
• New Package Provides Capability of Inspection and Probe After  
http://onsemi.com  
Board Mounting  
• Guardring for Stress Protection  
SCHOTTKY BARRIER  
RECTIFIERS  
• Low Forward Voltage Drop  
• 175°C Operating Junction Temperature  
• Wettable Flacks Option Available  
• NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
8 AMPERES  
60 VOLTS  
5,6  
1,2,3  
• These are Pb−Free Devices  
Mechanical Characteristics:  
• Case: Epoxy, Molded  
MARKING  
DIAGRAM  
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
• Lead Finish: 100% Matte Sn (Tin)  
A
C
C
1
B860  
AYWZZ  
A
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 2  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Not Used  
• Device Meets MSL 1 Requirements  
MAXIMUM RATINGS  
B860  
A
= Specific Device Code  
= Assembly Location  
= Year  
Rating  
Symbol  
Value  
Unit  
Y
W
ZZ  
= Work Week  
= Lot Traceability  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
V
RWM  
V
60  
R
Average Rectified Forward Current  
I
8.0  
A
A
F(AV)  
(Rated V , T = 165°C)  
ORDERING INFORMATION  
R
C
Peak Repetitive Forward Current,  
I
16  
FRM  
Device  
Package  
Shipping†  
1500 /  
(Rated V , Square Wave,  
R
20 kHz, T = 165°C)  
MBR860MFST1G  
SO−8 FL  
C
(Pb−Free) Tape & Reel  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
150  
A
FSM  
MBR860MFST3G  
NRVB860MFST1G  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
Storage Temperature Range  
T
−65 to +175  
−55 to +175  
40  
°C  
°C  
mJ  
stg  
Operating Junction Temperature  
T
J
NRVB860MFST3G  
Unclamped Inductive Switching  
Energy (10 mH Inductor,  
Non−repetitive)  
E
AS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
3B  
M4  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NOTE: The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dPD/dTJ < 1/RJA.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
October, 2013 − Rev. 0  
MBR860MFS/D  
1234

中文翻译

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MBR860MFST3G 替代型号

型号 品牌 替代类型 描述 数据表
NRVB860MFST3G ONSEMI

完全替代

 SWITCHMODE Power Rectifiers
NRVB860MFST1G ONSEMI

类似代替

 SWITCHMODE Power Rectifiers

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